CSD16411Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150Electrical CharacteristicsT = 25°C (unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16412Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITA• Optimized for Control FET Applications ..
CSD16413Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16413Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGS• Optimized for Control or Synchronous FETT = 25°C unless otherwise stated VALUE UNI ..
CSD17301Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGS• Optimized for Synchronous FET ApplicationsT = 25°C unless otherwise stated VALUE U ..
CSD17302Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITADESCRIPTIONV Drain to Source Voltage 30 ..
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CSD16411Q3
N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
Sample & Support & Product Tools & Technical Community Buy Folder Documents Software CSD16411Q3 SLPS206B – AUGUST 2009 – REVISED NOVEMBER 2016 CSD16411Q3 25-V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1• Ultra-Low Q and Q g gd T = 25°C TYPICAL VALUE UNIT A • Low-Thermal Resistance V Drain-to-Source Voltage 25 V DS • Avalanche Rated Q Gate Charge Total (4.5 V) 2.9 nC g • Lead-Free Terminal Plating Q Gate Charge Gate-to-Drain 0.7 nC gd V = 4.5 V 12 GS • RoHS Compliant R Drain-to-Source On Resistance mΩ DS(on) V = 10 V 8 GS • Halogen Free V Threshold Voltage 2 V GS(th) • SON 3.3-mm × 3.3-mm Plastic Package (1) Device Information 2 Applications DEVICE QTY MEDIA PACKAGE SHIP • Point-of-Load Synchronous Buck Converter for CSD16411Q3 2500 SON Tape Applications in Networking, Telecom and 13-Inch Reel 3.30-mm × 3.30-mm and CSD16411Q3T 250 Plastic Package Reel Computing Systems (1) For all available packages, see the orderable addendum at • Optimized for Control FET Applications the end of the data sheet. 3 Description Absolute Maximum Ratings This 25-V, 8-mΩ, 3.3-mm × 3.3-mm SON NexFET™ T = 25°C VALUE UNIT A power MOSFET has been designed to minimize V Drain-to-Source Voltage 25 V DS losses in power conversion applications. V Gate-to-Source Voltage +16 / –12 V GS Continuous Drain Current (Package Limited) 60 Top View Continuous Drain Current (Silicon Limited), I 50 A D T = 25°C C (1) Continuous Drain Current 14 (2) I Pulsed Drain Current, T = 25°C 130 A DM A (1) Power Dissipation 2.87 P W D Power Dissipation, T = 25°C 35 C T , Operating Junction J –55 to 150 °C T Storage Temperature STG Avalanche Energy, Single Pulse E 16 mJ AS I = 18 A, L = 0.1 mH, R = 25Ω D G 2 (1) R = 45°C/W on 1-in Cu (2-oz) on 0.06-in thick FR4 PCB. θJA (2) Max R = 3.5°C/W, pulse duration≤ 100μs, duty cycle≤ θJC 1%. R vs V Gate Charge DS(ON) GS 40 10 T = 25qC, I = 10 A I = 10 A C D D 36 9 T = 125qC, I = 10 A V = 12.5 V C D DS 32 8 28 7 24 6 20 5 16 4 12 3 8 2 4 1 0 0 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 V - Gate-to-Source Voltage (V) Q - Gate Charge (nC) GS g D007 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. R - On-State Resistance (m:) DS(on) V - Gate-to-Source Voltage (V) GS
