CSD16410Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITAThe NexFET™ power MOSFET has been design ..
CSD16410Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16411Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150Electrical CharacteristicsT = 25°C (unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16412Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITA• Optimized for Control FET Applications ..
CSD16413Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16413Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGS• Optimized for Control or Synchronous FETT = 25°C unless otherwise stated VALUE UNI ..
CXD9450-15 , Single-Chip FaxEngine Product Family
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXG1014N , 1.5 GHz Low Noise Amplifier/Down Conversion Mixer
CXG1030N , Power Amplifier for PHS
CXG1045N , GSM900/1800/1900 SPDT TX/RX Switch
CSD16410Q5A
N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150
CSD16410Q5A www.ti.com SLPS205A –AUGUST 2009–REVISED MAY 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16410Q5A 1 FEATURES 2• Ultra Low Qg and Qgd PRODUCT SUMMARY • Low Thermal Resistance V Drain to Source Voltage 25 V DS • Avalanche Rated Q Gate Charge Total (4.5V) 3.9 nC g Q Gate Charge Gate to Drain 1.1 nC • Pb Free Terminal Plating gd V = 4.5V 9.6 mΩ GS • RoHS Compliant R Drain to Source On Resistance DS(on) V = 10V 6.8 mΩ GS • Halogen Free V Threshold Voltage 1.9 V GS(th) • SON 5mm x 6mm Plastic Package APPLICATIONS ORDERING INFORMATION • Point-of-Load Synchronous Buck Converter Device Package Media Qty Ship for Applications in Networking, Telecom and SON 5X6 Plastic 13-inch Tape and CSD16410Q5A 2500 Computing Systems Package reel Reel • Optimized for Control FET Applications DESCRIPTION ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise stated VALUE UNIT A The NexFET™ power MOSFET has been designed V Drain to Source Voltage 25 V DS to minimize losses in power conversion applications. V Gate to Source Voltage +16 / –12 V GS Top View Continuous Drain Current, T = 25°C 59 A C I D (1) Continuous Drain Current 16 A S 1 8 D (2) I Pulsed Drain Current, T = 25°C 158 A DM A (1) P Power Dissipation 3 W D S 2 7 D T , Operating Junction and Storage J –55 to 150 °C T Temperature Range STG S 3 6 D Avalanche Energy, single pulse E 51 mJ AS I = 32A, L = 0.1mH, R = 25Ω D G D G 4 5 D 2 (1) R = 42°C/W on 1in Cu (2 oz.) on 0.060" thick FR4 PCB. qJA P0093-01 (2) Pulse width≤300ms, duty cycle≤2% R vs V Gate Charge DS(ON) GS 15 12 WI = 17A I = 17A D D 14 V = 12.5V 10 DS 13 T = 125°C C 12 8 11 10 6 9 4 8 7 2 6 T = 25°C C 5 0 0 2 4 6 8 10 12 0 2 4 6 8 10 V − Gate to Source Voltage − V Q − Gate Charge − nC GS g G006 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. R − On-State Resistance − m DS(on) V − Gate Voltage − V G
