CSD16409Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGS• Optimized for Control FET ApplicationsT = 25°C unless otherwise stated VALUE UNITA ..
CSD16410Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITAThe NexFET™ power MOSFET has been design ..
CSD16410Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16411Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150Electrical CharacteristicsT = 25°C (unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16412Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITA• Optimized for Control FET Applications ..
CSD16413Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CXD9450-15 , Single-Chip FaxEngine Product Family
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXG1014N , 1.5 GHz Low Noise Amplifier/Down Conversion Mixer
CXG1030N , Power Amplifier for PHS
CXG1045N , GSM900/1800/1900 SPDT TX/RX Switch
CSD16409Q3
N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
CSD16409Q3 www.ti.com SLPS204A –AUGUST 2009–REVISED MAY 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16409Q3 1 FEATURES PRODUCT SUMMARY 2• Ultra Low Q and Q g gd V Drain to Source Voltage 25 V DS • Low Thermal Resistance Q Gate Charge Total (4.5V) 4 nC g • Avalanche Rated Q Gate Charge Gate to Drain 1 nC gd • Pb Free Terminal Plating V = 4.5V 9.5 mΩ GS R Drain to Source On Resistance DS(on) V = 10V 6.2 mΩ • RoHS Compliant GS V Threshold Voltage 2 V th • Halogen Free • SON 3.3mm x 3.3mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 3.3 × 3.3 13-inch Tape and CSD16409Q3 2500 • Point-of-Load Synchronous Buck Converter Plastic Package reel Reel for Applications in Networking, Telecom and Computing Systems ABSOLUTE MAXIMUM RATINGS • Optimized for Control FET Applications T = 25°C unless otherwise stated VALUE UNIT A V Drain to Source Voltage 25 V DS DESCRIPTION V Gate to Source Voltage +16 / –12 V GS The NexFET™ power MOSFET has been designed Continuous Drain Current, T = 25°C 60 A C I D to minimize losses in power conversion applications. (1) Continuous Drain Current 15 A (2) I Pulsed Drain Current, T = 25°C 90 A DM A Top View (1) P Power Dissipation 2.6 W D T , Operating Junction and Storage S 1 8 D J –55 to 150 °C T Temperature Range STG Avalanche Energy, single pulse S 2 7 D E 72 mJ AS I = 38A, L = 0.1mH, R = 25Ω D G 2 (1) R = 47°C/W on 1in Cu (2 oz.) on 0.060" thick FR4 PCB. qJA S 3 6 D (2) Pulse width≤300ms, duty cycle≤2% D G 4 5 D P0095-01 R vs V Gate Charge DS(ON) GS 20 12 WI = 17A I = 17A D D 18 V = 12.5V 10 DS 16 14 T = 125°C C 8 12 10 6 8 4 6 4 T = 25°C C 2 2 0 0 2 4 6 8 10 12 0 2 4 6 8 10 V − Gate to Source Voltage − V Q − Gate Charge − nC GS g G006 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. R − On-State Resistance − m DS(on) V − Gate Voltage − V G
