CSD16408Q5 ,N-Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITATop ViewV Drain-to-source voltage 25 VDS ..
CSD16409Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGS• Optimized for Control FET ApplicationsT = 25°C unless otherwise stated VALUE UNITA ..
CSD16410Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITAThe NexFET™ power MOSFET has been design ..
CSD16410Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16411Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150Electrical CharacteristicsT = 25°C (unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16412Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITA• Optimized for Control FET Applications ..
CXD9450-15 , Single-Chip FaxEngine Product Family
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CSD16408Q5
N-Channel NexFET?Power MOSFET
CSD16408Q5 www.ti.com SLPS228A –OCTOBER 2009–REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFET 1 FEATURES PRODUCT SUMMARY 2• Ultralow Q and Q g gd V Drain-to-source voltage 25 V DS • Low Thermal Resistance Q Gate charge, total (4.5 V) 6.7 nC g • Avalanche Rated Q Gate charge, gate-to-drain 1.9 nC gd • SON 5-mm × 6-mm Plastic Package V = 4.5 V 5.4 mΩ GS r Drain-to-source on-resistance DS(on) V = 10 V 3.6 mΩ GS APPLICATIONS V Threshold voltage 1.8 V GS(th) • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems ORDERING INFORMATION • Optimized for Control FET Applications Device Package Media Qty Ship SON 5-mm × 6-mm 13-inch Tape and CSD16408Q5 plastic package (33-cm) 2500 reel DESCRIPTION reel The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise stated VALUE UNIT A Top View V Drain-to-source voltage 25 V DS V Gate-to-source voltage –12 to 16 V S 8 GS 1 D Continuous drain current, T = 25°C 113 A C I D (1) Continuous drain current 22 A S 2 7 D (2) I Pulsed drain current, T = 25°C 141 A DM A (1) P Power dissipation 3.1 W D S 3 6 D T , Operating junction and storage temperature J –55 to 150 °C T range STG D G 4 5 D Avalanche energy, single-pulse E 126 mJ AS I = 23 A, L = 0.1 mH, R = 25Ω D G P0094-01 2 2 (1) Typical R = 41°C/W on 1-inch (6.45-cm ), 2-oz. qJA (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration≤300ms, duty cycle≤2% put a break here is force notes closer to the table put a break here is force notes closer to the table r vs V GATE CHARGE DS(on) GS 16 12 WI = 25A I = 25A D D 14 V = 12.5V DS 10 12 8 10 T = 125°C C 8 6 6 4 4 2 2 T = 25°C C 0 0 0 2 4 6 8 10 12 0 5 10 15 20 V − Gate to Source Voltage − V Q − Gate Charge − nC GS g G006 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. R − On-State Resistance − m DS(on) V − Gate to Source Voltage − V GS
