CSD16407Q5 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGSThe NexFET™ power MOSFET has been designedT = 25°C unless otherwise stated VALUE UNI ..
CSD16407Q5C ,DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGSComputing SystemsT = 25°C unless otherwise stated VALUE UNITA• Optimized for Synchro ..
CSD16408Q5 ,N-Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITATop ViewV Drain-to-source voltage 25 VDS ..
CSD16409Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGS• Optimized for Control FET ApplicationsT = 25°C unless otherwise stated VALUE UNITA ..
CSD16410Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITAThe NexFET™ power MOSFET has been design ..
CSD16410Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
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CSD16407Q5
N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
CSD16407Q5 www.ti.com SLPS203A –AUGUST 2009–REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16407Q5 1 FEATURES PRODUCT SUMMARY 2• Ultralow Qg and Qgd V Drain-to0source voltage 25 V DS • Low Thermal Resistance Q Gate charge, total (4.5 V) 13.3 nC g • Avalanche Rated Q Gate charge, gate-to-drain 3.5 nC gd • SON 5-mm × 6-mm Plastic Package V = 4.5 V 2.5 mΩ GS R Drain-to-source on-resistance DS(on) V = 10 V 1.8 mΩ GS APPLICATIONS V Threshold voltage 1.6 V GS(th) • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and ORDERING INFORMATION Computing Systems Device Package Media Qty Ship • Optimized for Synchronous FET Applications SON 5 × 6 plastic 13-inch Tape and CSD16407Q5 2500 package reel reel DESCRIPTION ABSOLUTE MAXIMUM RATINGS The NexFET™ power MOSFET has been designed T = 25°C unless otherwise stated VALUE UNIT A to minimize losses in power conversion applications. V Drain-to-source voltage 25 V DS Top View V Gate-to-source voltage +16 / –12 V GS Continuous drain current, T = 25°C 100 A C I S 8 D 1 D (1) Continuous drain current 31 A (2) I Pulsed drain current, T = 25°C 200 A DM A S 2 7 D (1) P Power dissipation 3.1 W D T , Operating junction and storage temperature J –55 to 150 °C T range STG S 3 6 D Avalanche energy, single pulse E 218 mJ AS I = 66A, L = 0.1 mH, R = 25Ω D D G G 4 5 D 2 2 (1) R = 40°C/W on 1 in (6.45 cm ) Cu [2 oz. (0.071 mm qJA P0094-01 thick)] on 0.060-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration≤300ms, duty cycle≤2% r vs V Gate Charge DS(ON) GS 6 12 WI = 25A I = 25A D D V = 12.5V DS 5 10 4 8 T = 125°C C 3 6 2 4 T = 25°C C 1 2 0 0 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 V − Gate to Source Voltage − V Q − Gate Charge − nC GS g G006 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. R − On-State Resistance − m DS(on) V − Gate Voltage − V G
