CSD16406Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150Electrical Characteristics(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16407Q5 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGSThe NexFET™ power MOSFET has been designedT = 25°C unless otherwise stated VALUE UNI ..
CSD16407Q5C ,DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGSComputing SystemsT = 25°C unless otherwise stated VALUE UNITA• Optimized for Synchro ..
CSD16408Q5 ,N-Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITATop ViewV Drain-to-source voltage 25 VDS ..
CSD16409Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGS• Optimized for Control FET ApplicationsT = 25°C unless otherwise stated VALUE UNITA ..
CSD16410Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITAThe NexFET™ power MOSFET has been design ..
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CSD16406Q3
N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
Sample & Support & Product Tools & Technical Community Buy Folder Documents Software CSD16406Q3 SLPS202B – AUGUST 2009 – REVISED DECEMBER 2015 CSD16406Q3 N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1• Ultra-Low Q and Q g gd T = 25°C TYPICAL VALUE UNIT A • Low Thermal Resistance V Drain-to-Source Voltage 25 V DS • Avalanche Rated Q Gate Charge Total (4.5 V) 5.8 nC g • Pb Free Terminal Plating Q Gate Charge Gate to Drain 1.5 nC gd V = 4.5 V 5.9 mΩ GS • RoHS Compliant Drain-to-Source On- R DS(on) Resistance V = 10 V 4.2 mΩ GS • Halogen Free V Threshold Voltage 1.8 V th • SON 3.3 mm × 3.3 mm Plastic Package . 2 Applications (1) Ordering Information • Point-of-Load Synchronous Buck Converter for DEVICE MEDIA QTY PACKAGE SHIP Applications in Networking, Telecom, and CSD16406Q3 13-Inch Reel 2500 SON 3.3 x 3.3 mm Tape and Computing Systems Plastic Package Reel CSD16406Q3T 13-Inch Reel 250 • Optimized for Control or Synchronous FET (1) For all available packages, see the orderable addendum at Applications the end of the data sheet. Absolute Maximum Ratings 3 Description T = 25°C VALUE UNIT A This 25 V, 4.2 mΩ, 3.3 mm × 3.3 mm SON V Drain-to-Source Voltage 25 V NexFET™ power MOSFET has been designed to DS V Gate-to-Source Voltage +16 / –12 V minimize losses in power conversion applications. GS Continuous Drain Current (Package limited) 60 Top View Continuous Drain Current (Silicon limited), I 79 A D T = 25°C C S 8 D (1) Continuous Drain Current 19 (2) I Pulsed Drain Current 240 A DM S 7 D (1) Power Dissipation 2.8 P W D Power Dissipation, T = 25°C 46 C S 6 D T , Operating Junction Temperature, J –55 to 150 °C D T Storage Temperature stg G 5 D Avalanche Energy, single pulse E 101 mJ P0095-01 AS I = 45 A, L = 0.1 mH, R = 25Ω D G 2 (1) Typical R = 45°C/W on a 1 inch , 2 oz. Cu pad on a 0.06 θJA inch thick FR4 PCB. (2) Max R = 2.7°C/W, pulse duration≤100μs, duty cycle≤1% θJC R vs V Gate Charge DS(on) GS 12 14 T = 25° C, I = 20 A I = 10 A C D D V = 12.5 V T = 125° C, I = 20 A DS C D 12 10 10 8 8 6 6 4 4 2 2 0 0 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 V - Gate-To-Source Voltage (V) GS Q - Gate Charge (nC) g D007 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. R - On-State Resistance (m:) DS(on) V - Gate-to-Source Voltage (V) GS
