CSD16401Q5 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150Electrical CharacteristicsT = 25°C (unless otherwise noted)APARAMETER TEST CONDITIONS MIN TYP MAX U ..
CSD16403Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGS• Optimized for Control FET ApplicationsT = 25°C unless otherwise stated VALUE UNITA ..
CSD16404Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGS• Optimized for Control FET ApplicationsT = 25°C unless otherwise stated VALUE UNITA ..
CSD16406Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150Electrical Characteristics(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16407Q5 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGSThe NexFET™ power MOSFET has been designedT = 25°C unless otherwise stated VALUE UNI ..
CSD16407Q5C ,DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150MAXIMUM RATINGSComputing SystemsT = 25°C unless otherwise stated VALUE UNITA• Optimized for Synchro ..
CXD9450-15 , Single-Chip FaxEngine Product Family
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXG1014N , 1.5 GHz Low Noise Amplifier/Down Conversion Mixer
CXG1030N , Power Amplifier for PHS
CXG1045N , GSM900/1800/1900 SPDT TX/RX Switch
CSD16401Q5
N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
Support & Product Order Tools & Technical Community Folder Now Documents Software CSD16401Q5 SLPS200C – AUGUST 2009 – REVISED JANUARY 2018 CSD16401Q5 25-V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1• Ultra-Low Q and Q g gd T = 25°C VALUE UNIT A • Low Thermal Resistance V Drain-to-Source Voltage 25 V DS • Avalanche Rated Q Gate Charge, Total (4.5 V) 21 nC g • SON 5-mm × 6-mm Plastic Package Q Gate Charge, Gate-to-Drain 5.2 nC gd V = 4.5 V 1.8 GS Drain-to-Source R mΩ DS(on) On-Resistance 2 Applications V = 10 V 1.3 GS V Threshold Voltage 1.5 V GS(th) • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and (1) Device Information Computing Systems DEVICE MEDIA QTY PACKAGE SHIP • Optimized for Synchronous FET Applications SON Tape CSD16401Q5 13-Inch Reel 2500 5.00-mm × 6.00-mm and 3 Description Plastic Package Reel This 25-V, 1.3-mΩ, 5-mm × 6-mm SON NexFET™ (1) For all available packages, see the orderable addendum at power MOSFET has been designed to minimize the end of the data sheet. losses in power conversion applications. Absolute Maximum Ratings Top View T = 25°C VALUE UNIT A V Drain-to-Source Voltage 25 V DS S 1 8 D V Gate-to-Source Voltage –12 to 16 V GS Continuous Drain Current (Package Limited) 100 Continuous Drain Current (Silicon Limited), S 2 7 D I 261 A D T = 25°C C (1) Continuous Drain Current 38 (2) S 3 6 D I Pulsed Drain Current, T = 25°C 240 A DM A (1) Power Dissipation 3.1 P W D D Power Dissipation, T = 25°C 156 C G 4 5 D T , Operating Junction, J –55 to 150 °C P0094-01 T Storage Temperature stg Avalanche Energy, Single Pulse E 500 mJ AS I = 100 A, L = 0.1 mH, R = 25Ω D G 2 2 (1) R = 40°C/W on 1-in (6.45-cm ) Cu 2-oz (0.071-mm) thick θJA on 0.06-in (1.52-mm) thick FR4 PCB. (2) Max R = 0.8°C/W, pulse duration≤ 100μs, duty cycle≤ θJC 1%. R vs V Gate Charge DS(ON) GS 12 6 I = 40 A T = 25° C, I = 40 A D C D V = 12.5 V T = 125° C, I = 40 A DS C D 10 5 8 4 6 3 2 4 2 1 0 0 0 2 4 6 8 10 12 0 10 20 30 40 50 60 V - Gate-to-Source Voltage (V) Q - Gate Charge (nC) GS g D007 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. R - On-State Resistance (m:) DS(on) V - Gate-to-Source Voltage (V) GS
