CSD16325Q5 ,N-Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITADESCRIPTIONV Drain to Source Voltage 25 ..
CSD16340Q3 ,N Channel NexFET?Power MOSFETElectrical Characteristics(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16401Q5 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150Electrical CharacteristicsT = 25°C (unless otherwise noted)APARAMETER TEST CONDITIONS MIN TYP MAX U ..
CSD16403Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGS• Optimized for Control FET ApplicationsT = 25°C unless otherwise stated VALUE UNITA ..
CSD16404Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGS• Optimized for Control FET ApplicationsT = 25°C unless otherwise stated VALUE UNITA ..
CSD16406Q3 ,N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150Electrical Characteristics(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CXD9450-15 , Single-Chip FaxEngine Product Family
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXG1014N , 1.5 GHz Low Noise Amplifier/Down Conversion Mixer
CXG1030N , Power Amplifier for PHS
CXG1045N , GSM900/1800/1900 SPDT TX/RX Switch
CSD16325Q5
N-Channel NexFET?Power MOSFET
CSD16325Q5 www.ti.com SLPS218C –AUGUST 2009–REVISED APRIL 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16325Q5 1 FEATURES PRODUCT SUMMARY 2• Optimized for 5V Gate Drive V Drain to Source Voltage 25 V DS • Ultralow Q and Q g gd Q Gate Charge Total (4.5V) 18 nC g • Low Thermal Resistance Q Gate Charge Gate to Drain 3.5 nC gd • Avalanche Rated V = 3V 2.1 mΩ GS R Drain to Source On Resistance V = 4.5V 1.7 mΩ • Pb Free Terminal Plating DS(on) GS V = 8V 1.5 mΩ GS • RoHS Compliant V Threshold Voltage 1.1 V GS(th) • Halogen Free • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 6-mm 13-Inch Tape and CSD16325Q5 2500 • Point-of-Load Synchronous Buck in Plastic Package Reel Reel Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise stated VALUE UNIT A DESCRIPTION V Drain to Source Voltage 25 V DS V Gate to Source Voltage +10 / –8 V GS The NexFET™ power MOSFET has been designed Continuous Drain Current, T = 25°C 100 A to minimize losses in power conversion applications C I D (1) and optimized for 5V gate drive applications. Continuous Drain Current 33 A (2) I Pulsed Drain Current, T = 25°C 200 A DM A (1) Top View P Power Dissipation 3.1 W D T , Operating Junction and Storage J –55 to 150 °C S 1 8 D T Temperature Range STG Avalanche Energy, single pulse E 500 mJ AS S 2 7 D I = 100A, L = 0.1mH, R = 25Ω D G 2 2 (1) Typical R = 38°C/W on 1-inch (6.45-cm ), 2-oz. qJA S 3 6 D (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. D G 4 5 D (2) Pulse duration≤300ms, duty cycle≤2% P0094-01 R vs V Gate Charge DS(on) GS 5 10 I = 30A I = 30A 9 D D V = 12.5V DS 8 4 7 T = 125°C C 3 6 5 2 4 3 1 2 T = 25°C C 1 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 V − Gate to Source Voltage − V Q − Gate Charge − nC g GS G003 G006 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. R − On-State Resistance − mW DS(on) V − Gate Voltage − V G
