CRS30I40A ,Schottky barrier diodeAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 ) ) ) )a ..
CRY62 ,Zener Diode Silicon Epitaxial TypeCRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Use in Communication, Automa ..
CRY68 ,Zener Diode Silicon Epitaxial TypeCRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Use in Communication, Automa ..
CRY75 ,Zener Diode Silicon Epitaxial TypeCRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Use in Communication, Automa ..
CRY82 ,Zener Diode Silicon Epitaxial TypeCRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Use in Communication, Automa ..
CRY91 ,Zener Diode Silicon Epitaxial TypeCRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Use in Communication, Automa ..
CX24951 , Single-Chip Cable Modem Solution
CX28394-22 , Quad/x16/Octal-T1/E1/J1 Framers
CX28394-22 , Quad/x16/Octal-T1/E1/J1 Framers
CX3225SB16000D0PESZZ , Crystal Units Surface Mount Type
CX-49F , For ECU.
CX-49F , For ECU.
CRS30I40A
Schottky barrier diode
CRS30I40A
Schottky Barrier Diode
CRS30I40ACRS30I40ACRS30I40ACRS30I40A
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Peak forward voltage: VFM = 0.55 V (max) @IFM = 3 A
(2) Average forward current: IF(AV) = 3 A
(3) Repetitive peak reverse voltage: VRRM = 40 V
(4) Small, thin package suitable for high-density board assembly
Toshiba Nickname: S-FLATTM
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, Taaa a = 25 = 25 = 25 = 25 ))))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tℓ = 79 , square wave (α = 180°), VR = 20 V
Note 2: f = 50 Hz, half-sine wave
