CRS10I30B ,Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
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CRS10I30B
Schottky barrier diode
CRS10I30B TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS10I30B Secondary Rectification in Switching Regulators
Reverse-Current Protection in Mobile Devices Forward voltage: VFM = 0.42 V (max) @ IFM = 1.0 A Forward current (AV): IF (AV) = 1.0 A Repetitive peak reverse voltage: VRRM = 30 V Suitable for high-density board assembly due to the use of a small
surface-mount package, “S-FLATTM”
Absolute Maximum Ratings (Ta = 25°C) Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ta = 51°C : Device mounted on a glass-epoxy board Board size : 50 mm × 50 mm Soldering size : 6 mm × 6 mm Board thickness : 1.6 mm
Rectangular waveform (α = 180°), VR = 15 V
Unit: mm
Weight: 0.013 g (typ.)