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CQY37NVISHAYN/a10000avaiGaAs Infrared Emitting Diode in Miniature (T-戮) Package


CQY37N ,GaAs Infrared Emitting Diode in Miniature (T-戮) Package Document Number 810024 (5) Rev. 2, 20-May-99I – Relative Radiant Intensitye relCQY37NVishay ..
CQY80 , OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
CQY80 , OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
CQY80N ,Optocoupler, Phototransistor Output, With Base Connectionfeatures:

CQY37N
GaAs Infrared Emitting Diode in Miniature (T-戮) Package
CQY37N
Vishay Semiconductors

www.vishay.comDocument Number 81002
GaAs Infrared Emitting Diode in Miniature (T– )
Package
Description

CQY37N is a standard GaAs infrared emitting diode in
a miniature top view plastic package.
Its clear lens provides a high radiant intensity without
external optics.
The diode is case compatible to the BPW17N photo-
transistor, allowing the user to assemble his own
optical interrupters.
Features
Suitable for pulse operation Standard T– lensed miniature package Angle of half intensity ϕ = ± 12 Peak wavelength p = 950 nm Good spectral matching to Si photodetectors
94 8639
Applications

Radiation source in near infrared range
Absolute Maximum Ratings

Tamb = 25C
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