CQX14 ,GaAs INFRARED EMITTING DIODECQX14, CQX16GaAs INFRARED EMITTING DIODEDESCRIPTIONPACKAGE DIMENSIONS0.209 (5.31)The CQX14/16 are 9 ..
CQY37N ,GaAs Infrared Emitting Diode in Miniature (T-戮) Package Document Number 810024 (5) Rev. 2, 20-May-99I – Relative Radiant Intensitye relCQY37NVishay ..
CQY80 , OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
CQY80 , OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
CQY80N ,Optocoupler, Phototransistor Output, With Base Connectionfeatures:
CQX14
GaAs INFRARED EMITTING DIODE
CQX14, CQX16 GaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS 0.209 (5.31) The CQX14/16 are 940 nm LEDs in a 0.184 (4.67) narrow angle, TO-46 packages. 0.030 (0.76) 0.255 (6.48) NOM FEATURES • Good optical to mechanical alignment 1.00 (25.4) MIN • Mechanically and wavelength matched ANODE SCHEMATIC (CASE) to the TO-18 series phototransistor • Hermetically sealed package 3 ANODE 0.100 (2.54) (Connected • High irradiance level To Case) 0.050 (1.27) • European “Pro Electron” registered CATHODE 1 13 0.040 (1.02) 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. Ø0.020 (0.51) 2X 0.040 (1.02) 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 45° 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning NOTES: agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 1. Dimensions for all drawings are in inches (mm). 6. As long as leads are not under any stress or spring tension 2. Tolerance of ± .010 (.25) on all non-nominal dimensions 7. Total power output, P , is the total power radiated by the device into O unless otherwise specified. a solid angle of 2 ! steradians. (T = 25°C unless otherwise specified) ABSOLUTE MAXIMUM RATINGS A Parameter Symbol Rating Unit Operating Temperature T -65 to +125 °C OPR Storage Temperature T -65 to +150 °C STG (3,4,5 and 6) Soldering Temperature (Iron) T 240 for 5 sec °C SOL-I (3,4 and 6) Soldering Temperature (Flow) T 260 for 10 sec °C SOL-F Continuous Forward Current I 100 mA F Forward Current (pw, 1µs; 200Hz) I 10 A F Reverse Voltage V 3V R (1) Power Dissipation (T = 25°C) P 170 mW D A (2) Power Dissipation (T = 25°C) P 1.3 W D C (TA =25°C) (All measurements made under pulse conditions) ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Peak Emission Wavelength I = 100 mA " — 940 — nm F P Emission Angle at 1/2 Power I = 100 mA # — ±8 — Deg. F Forward Voltage I = 100 mA V — — 1.7 V F F Reverse Leakage Current V = 3 V I — — 10 µA R R (7) Total Power CQX14 I = 100 mA P 5.4 — — mW F O (7) Total Power CQX16 I = 100 mA P 1.5 — — mW F O Rise Time 0-90% of output t — 1.0 — µs r Fall Time 100-10% of output t — 1.0 — µs f 2001 DS300284 4/24/01 1 OF 3
