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CPV364M4U
600V UltraFast 8-60 kHz 3-Phase Bridge IGBT in a IMS-2 package
PD- 5041
International
TOR, Rectifier PRELIMINARY CPV364M4U
IGBT SIP MODULE UltraFast IGBT
Features
. Fully isolated printed circuit board mount package
. Switching-loss rating includes all "tail" losses
. HEXFREDTM soft ultrafast diodes
. Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Product Summary
Output Current in a Typical 20 kHz Motor Drive
12 ARMS per phase (3.5 kW total) with Tc = 90°C, Tu = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600 V
Ic @ To = 25°C Continuous Collector Current, each IGBT 20
Ic @ To = 100°C Continuous Collector Current, each IGBT 10
ICM Pulsed Collector Current 0) 60 A
ILM Clamped Inductive Load Current © 60
IF @ Tc = 100°C Diode Continuous Forward Current 9.3
IFM Diode Maximum Forward Current 60
VGE Gate-to-Emitter Voltage :20 V
VISOL Isolation Voltage, any terminal to case, 1 minute 2500 VRMS
PD @ To = 25°C Maximum Power Dissipation, each IGBT 63 W
Po @ To = 100°C Maximum Power Dissipation, each IGBT 25
TJ Operating Junction and -40 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 Ibf-in (0.55-0.8 N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction - 2.0
Rac (DIODE) Junction-to-Case, each diode, one diode in conduction - 3.0 °CNV
Recs (MODULE) Case-to-Sink, flat, greased surface 0.10 -
Wt Weight of module 20 (0.7) - g (oz)
1/21/97
International
CPV364M4U TOR liectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage© 600 - - V VGE = 0V, lc = 250pA
AV(BR)CESIATJ Temperature Coeff. of Breakdown Voltage - 0.63 V/°C VGE = 0V, lc = 1.0mA
VCE(on) Collector-to-Emilie, Saturation Voltage - 1.56 2.1 Ic = 10A VGE = 15V
- 1.84 - V lc = 20A See Fig. 2, 5
- 1.56 - lc=10A,Tu=1500C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance (ii) 11 18 - S VCE = 100V, lc = 10A
ICES Zero Gate Voltage Collector Current - - 250 HA VGE = 0V, VCE = 600V
- - 3500 VGE = 0V, VCE = 600V, T: = 150°C
VFM Diode Forward Voltage Drop - 1.3 1.7 V lc = 15A See Fig. 13
- 1.2 1.6 lc =15A,Tu =150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 4c20V
Switching Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 100 160 Ic = 10A
Qge Gate - Emitter Charge (turn-on) - 16 24 nC Vcc = 400V
Qqc Gate - Collector Charge (turn-on) - 40 55 VGE = 15V See Fig. 8
td(on) Turn-On Delay Time - 41 - Tu = 25°C
tr Rise Time - 13 - ns lc = 10A, Vcc = 480V
tum) Turn-Off Delay Time - 96 140 VGE = 15V, Rs = 109
tf Fall Time - 110 160 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.26 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.18 - mJ See Fig. 9, 10, 11, 18
ES Total Switching Loss - 0.44 0.7
tdmn) Turn-On Delay Time - 39 - TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 15 - ns Ic = 10A, Vcc = 480V
td(off) Turn-Off Delay Time - 220 - VGE = 15V, Rs = lon
tf Fall Time - 160 - Energy losses include "tail" and
ES Total Switching Loss - 0.74 - mJ diode reverse recovery.
Cies Input Capacitance - 2100 - VGE = 0V
Coes Output Capacitance - 110 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 34 - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns T J = 25°C See Fig.
- 74 120 TJ =125°C 14 IF =15A
Irr Diode Peak Reverse Recovery Charge - 4.0 6.0 A Tu = 25°C See Fig.
- 6.5 10 TJ = 125°C 15 VR = 200V
er Diode Reverse Recovery Charge - 80 180 nC TJ = 25°C See Fig.
- 220 600 TJ = 125''C 16 di/dt =200Aps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 188 - Alps Tu = 25°C See Fig.
During tb - 160 - TJ = 125°C 17
