CPV363MM ,600V 3-Phase Bridge IGBT in a IMS-2 packageapplications requiring short circuit withstand capability.Absolute Maximum Ratings Par ..
CPV364M4U ,600V UltraFast 8-60 kHz 3-Phase Bridge IGBT in a IMS-2 packageapplications and where space is at apremium.IMS-2Absolute Maximum Ratings Parameter Ma ..
CQX14 ,GaAs INFRARED EMITTING DIODECQX14, CQX16GaAs INFRARED EMITTING DIODEDESCRIPTIONPACKAGE DIMENSIONS0.209 (5.31)The CQX14/16 are 9 ..
CQY37N ,GaAs Infrared Emitting Diode in Miniature (T-戮) Package Document Number 810024 (5) Rev. 2, 20-May-99I – Relative Radiant Intensitye relCQY37NVishay ..
CQY80 , OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
CQY80 , OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
CTCDRH6D38-6R2N , Power Inductors - Shielded
CTDO1608C-683 , Power Inductors - Unshielded
CTDO3316P-103 , Power Inductors - Unshielded
CTDO3316P-103 , Power Inductors - Unshielded
CTDO3316PF-472 , Power Inductors - Unshielded
CTDO3316PF-473 , Power Inductors - Unshielded
CPV363MM
600V 3-Phase Bridge IGBT in a IMS-2 package
International
IOR Rectifier
IGBT SIP MODULE
Features
. Short Circuit Rated - 10ps @ 125°C, VGE = 15V .
Fully isolated printed circuit board mount package
. Switching-loss rating includes all "tail" losses
. HEXFREDTM soft ultrafast diodes
. Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
7.65 ARMS per phase (2.4 kW total) with Tc = 90°C, TI, = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifer's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-poie applications requiring short circuit withstand capability.
Absolute Maximum Ratings
CPV363MM
Short Circuit Rated Fast IGBT
Parameter Max. Units
VCES Collector-to-Emi) Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current, each IGBT 13
lc @ Tc = 100°C Continuous Collector Current, each IGBT 7.0
ICM Pulsed Collector Current C) 26 A
ILM Clamped Inductive Load Current © 26
IF @ TC = 100°C Diode Continuous Forward Current 6.1
IFM Diode Maximum Forward Current 26
tsc Short Circuit VWthstand Time 10 us
VGE Gate-to-Emitter Voltage i 20 V
VISOL Isolation Voltage, any terminal to case, 1 min. 2500 VRMS
Pro @ TC = 25°C Maximum Power Dissipation, each IGBT 36 W
PD @ Tc = 100°C Maximum Power Dissipation, each IGBT 14
To Operating Junction and MO to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 Ibf-in (0.55 - 0.8 N-m)
Thermal Resistance
Parameter Typ. Max. Units
F%c(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction - 3.5
RQJC (DIODE) Junction-to-Case, each diode, one diode in conduction - 5.5 °C/W
Recs (MODULE) Case-to-Sink, flat, greased surface 0.1 -
Wt Weight of module 20 (0.7) - g (oz)
Revision 2
CPV363MM TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage © 600 - - V VGE = 0V, Ic = 250pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.68 - Vl°C VGE = 0V, k: = 1.0mA
Vcaon) Collector-to-emitter Saturation Voltage - 1.6 2.4 Ic = 7.0A VGE = 15V
- 2.0 - V Ic = 13A See Fig. 2, 5
- 1.7 - Ic = 7.0A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VcE = VGE, k: = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, lc = 250pA
gfe Forward Transconductance © 3.2 6.3 - S VCE = 100V, lc = 14A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 2500 VGE = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V k: = 12A See Fig. 13
- 1.3 1.6 Ic=12A,TJ=150°C
IGES Gate-to-Emitter Leakage Current - - 1500 nA VGE = EOV
Switching Characteristics @ I, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 32 49 k: = 14A
the Gate - Emitter Charge (turn-on) - 6.7 10 nC Vcc = 400V
Qgc Gate - Collector Charge (turn-on) - 13 21 See Fig. 8
td(on) Tum-On Delay Time - 64 - Tu = 25°C
tr Rise Time - 29 - ns lc = 7.0A, Vcc = 480V
td(off) Turn-Off Delay Time - 340 500 VGE = 15V, Rs = 23n
t, Fall Time - 240 350 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.28 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.70 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 0.98 1.5
tsc Short Circuit Vthtand Time 10 - - us Vcc = 360V, Tu = 125°C
VGE = 15V, Rs = 239, VCPK < 500V
tuion) Tum-On Delay Time - 62 - To = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 28 - ns IC = 7.0A, Vcc = 480V
td(0ff) Tum-Off Delay Time - 620 - VGE = 15V, Rs = 239
tr Fall Time - 420 - Energy losses include "tail" and
G Total Switching Loss - 1.8 - mJ diode reverse recovery.
Cies Input Capacitance - 750 - VGE = 0V
CDes Output Capacitance - 100 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 9.3 - f = 1.0MHz
tn Diode Reverse Recovery Time - 42 60 ns TJ = 25''C See Fig.
- 80 120 TJ =125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Current - 3.5 6.0 A To = 25°C See Fig.
- 5.6 10 To = 125°C 15 V R = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC T J = 25°C See Fig.
- 220 600 To = 125°C 16 di/dt = AXWps
diaecwldt Diode Peak Rate of Fall of Recovery - 180 - Alps TJ = 25°C See Fig.
During tb - 120 - To = 125°C 17
Notes: © Vcc=80%(VcEs), VGE=20V, L=10pH, © Pulse width 5.0ps,
co Repetitive rating; VGE=20V, pulse width limited Rs-- 239, (See fig. 19) single shot.
by max. junction temperature. ( See fig. 20)
© Pulse width 5 80ps; duty factor S 0.1%.
