CPV363MF ,600V 3-Phase Bridge IGBT in a IMS-2 packageFeatures• Fully isolated printed circuit board mount package• Switching-loss rating includes all "t ..
CPV363MM ,600V 3-Phase Bridge IGBT in a IMS-2 packageapplications requiring short circuit withstand capability.Absolute Maximum Ratings Par ..
CPV364M4U ,600V UltraFast 8-60 kHz 3-Phase Bridge IGBT in a IMS-2 packageapplications and where space is at apremium.IMS-2Absolute Maximum Ratings Parameter Ma ..
CQX14 ,GaAs INFRARED EMITTING DIODECQX14, CQX16GaAs INFRARED EMITTING DIODEDESCRIPTIONPACKAGE DIMENSIONS0.209 (5.31)The CQX14/16 are 9 ..
CQY37N ,GaAs Infrared Emitting Diode in Miniature (T-戮) Package Document Number 810024 (5) Rev. 2, 20-May-99I – Relative Radiant Intensitye relCQY37NVishay ..
CQY80 , OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
CTB-34M , Schottky Barrier Diodes (Center-tap) 40V
CTCDRH6D38-6R2N , Power Inductors - Shielded
CTDO1608C-683 , Power Inductors - Unshielded
CTDO3316P-103 , Power Inductors - Unshielded
CTDO3316P-103 , Power Inductors - Unshielded
CTDO3316PF-472 , Power Inductors - Unshielded
CPV363MF
600V 3-Phase Bridge IGBT in a IMS-2 package
international
IOR Rectifier
IGBT SIP MODULE
Features
. Fully isolated printed circuit board mount package
. Switching-loss rating includes all "tail" losses
. HEXFREDTM soft ultrafast diodes
. Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
7.65 ARMS per phase (2.4 kW total) with To = 90°C, T: = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifer's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
PD - 5.023B
CPV363MF
Fast IGBT
Parameter Max. Units
VCES Collector-to-Emilie, Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current, each IGBT 16
Ic @ To = 100''C Continuous Collector Current, each IGBT 8.7
ICM Pulsed Collector Current CD 50 A
ILM Clamped Inductive Load Current © 50
IF @ Tc = 100°C Diode Continuous Forward Current 6.1
IFM Diode Maximum FonNard Current 50
VGE Gate-to-Emitter Voltage i20 V
VISOL Isolation Voltage, any terminal to case, 1 min. 2500 VRMS
PD @ Tc = 25°C Maximum Power Dissipation, each IGBT 36 W
PD @ Tc = 100°C Maximum Power Dissipation, each IGBT 14
TJ Operating Junction and MO to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 Ibf-in (0.55-0.8 tom)
Thermal Resistance
Parameter Typ. Max. Units
ReJc(|GBT) Junction-to-Case, each IGBT, one IGBT in conduction - 3.5
ROJC (DIODE) Junction-to-Case, each diode, one diode in conduction - 5.5 ''CAN
Rocs (MODULE) Case-to-Sink, flat, greased surface 0.1 -
Wt Weight of module 20 (0.7) - g (oz)
Revision 1
CPV363M F TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage © 600 - - V VGE = 0V, Ic = 250pA
AV(BR)CE3/ATJ Temp. Coeff. of Breakdown Voltage - 0.69 - V/°C VGE = 0V, lc = 1.0mA
Vcaon) Collector-to-Emitter Saturation Voltage - 1.5 1.6 k: = 8.7A l/GE = 15V
- 1.9 - V lc = 16A See Fig. 2, 5
- 1.6 - lc = 8.7A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 I/cs = VGE, Ic = 250PA
AVGEWATJ Temp. Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, k: = 250PA
gfe Forward Transconductance © 6.0 8.0 - S VCE = 100V, Ic = 8.7A
ICES Zero Gate Voltage Collector Current - - 250 PA VGE = 0V, VCE = 600V
- - 2500 VGE = 0V, ch = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V Ic = 12A See Fig. 13
- 1.3 1.6 k: =12A,TJ =150°C
IGES Gate-to-Emi) Leakage Current - - 1500 nA VGE = t20V
Switching Characteristics @ I, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 23 30 Ic = 16A
the Gate - Emitter Charge (turn-on) - 2.4 5.9 n0 Vcc = 400V
090 Gate - Collector Charge (turn-on) - 9.2 15 See Fig. 8
td(on) Turn-On Delay Time - 25 - To = 25°C
tr Rise Time - 21 - ns Ic = 8.7A, Vcc = 480V
tam) Turn-Off Delay Time - 210 300 VGE = 15V, Rs = 23n
t; Fall Time - 300 450 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.44 - diode reverse recovery
Eoff Turn-Off Switching Loss - 2.0 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 2.4 3.2
tdwn) Turn-On Delay Time - 25 - To = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 21 - ns Ic = 8.7A, Vcc = 480V
td(off) Turn-Off Delay Time - 280 - VGE = 15V, Rs = 23n
tf Fall Time - 550 - Energy losses include "tail" and
Ets Total Switching Loss - 3.4 - mJ diode reverse recovery
Cies Input Capacitance - 670 - VGE = 0V
Coes Output Capacitance - 100 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - IO - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns To = 25°C See Fig.
- 80 120 To = 125°C 14 IF =12A
Irr Diode Peak Reverse Recovery Current - 3.5 6.0 A T J = 25°C See Fig.
- 5.6 10 TJ = 125°C 15 VR = 200V
G, Diode Reverse Recovery Charge - 80 180 nC To = 25°C See Fig.
- 220 600 To = 125°C 16 dth = 200Nus
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 180 - Alps To = 25°C See Fig.
During tr, - 116 - To = 125°C 17
Notes:
C) Repetitive rating; VGE=20V, pulse width
limited
( See fig. 20 )
by max. junction temperature.
© Vcc=80%(VcEs), Nrse='NN, L=10pH,
Rc-- 23Q, ( See fig. 19)
6) Pulse width S 80ps; duty factor 5 0.1%.
© Pulse width 5.0ps,
single shot.
