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CPV363M4U
600V UltraFast 8-60 kHz 3-Phase Bridge IGBT in a IMS-2 package
International
TOR, Rectifier
PRELIMINARY
IGBT SIP MODULE
Features
. Fully isolated printed circuit board mount package
. Switching-loss rating includes all "tail" losses
. HEXFREDTM soft ultrafast diodes
. Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Product Summary
Output Current in a Typical 20 kHz Motor Drive
7.1 ARMS per phase (2.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with Iowthermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
PD -5039
CPV363h/4U
UItraFast IGBT
Parameter Max. Units
VCEs Collector-to-emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current, each IGBT 13
lc @ Tc = 100°C Continuous Collector Current, each IGBT 6.8
ICM Pulsed Collector Current OD 40 A
ILM Clamped Inductive Load Current © 40
IF @ Tc = 100°C Diode Continuous Forward Current 6.1
IFM Diode Maximum Forward Current 40
VGE Gate-to-Emitter Voltage Elo V
Visor, Isolation Voltage, any terminal to case, 1 minute 2500 VRMS
PD @ To = 25°C Maximum Power Dissipation, each IGBT 36 W
PD @ Tc = 100°C Maximum Power Dissipation, each IGBT 14
Tu Operating Junction and -40 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf-in (0.55-0.8 N-m)
Thermal Resistance
Parameter Typ. Max. Units
Roos (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction - 3.5
ReJC (DIODE) Junction-to-Case, each diode, one diode in conduction - 5.5 °C/W
Recs (MODULE) Case-to-Sink, flat, greased surface 0.10 -
Wt Weight of module 20 (0.7) - g (oz)
1 2/ 30/96
International
CPV363M4U TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage© 600 - - V VGE = 0V, lc = 250pA
AV(BR)CESIATJ Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C VGE = 0V, lc = 1.0mA
VCE(on) Collector-to-Emilie, Saturation Voltage - 1.70 2.2 Ic = 6.8A VGE = 15V
- 2.00 - V lc = 13A See Fig. 2, 5
- 1.70 - m
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance (ii) 4.0 6.0 - S VCE = 100V, lc = 6.8A
ICES Zero Gate Voltage Collector Current - - 250 HA VGE = 0V, VCE = 600V
- - 2500 VGE = 0V, VCE = 600V, T: = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V lc = 12A See Fig. 13
- 1.3 1.6 lc =12A,Tu =150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 4c20V
Switching Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 53 79 lc = 6.8A
Qge Gate - Emitter Charge (turn-on) - 7.7 12 nC Vcc = 400V
Qqc Gate - Collector Charge (turn-on) - 21 31 See Fig. 8
td(on) Turn-On Delay Time - 43 - Tu = 25°C
tr Rise Time - 14 - ns lc = 6.8A, Vcc = 480V
tum) Turn-Off Delay Time - 95 140 VGE = 15V, Rs = 239
tf Fall Time - 83 190 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.17 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.15 - mJ See Fig. 9, 10, 11, 18
ES Total Switching Loss - 0.32 0.45
tdmn) Turn-On Delay Time - 41 - TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 16 - ns Ic = 6.8A, Vcc = 480V
td(off) Turn-Off Delay Time - 110 - VGE = 15V, Rs = 239
tf Fall Time - 230 - Energy losses include "tail" and
ES Total Switching Loss - 0.52 - mJ diode reverse recovery.
Cies Input Capacitance - 1100 - VGE = 0V
Coes Output Capacitance - 73 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns T J = 25°C See Fig.
- 83 120 TJ =125°C 14 IF =12A
Irr Diode Peak Reverse Recovery Charge - 3.5 6.0 A Tu = 25°C See Fig.
- 5.6 10 TJ = 125°C 15 VR = 200V
er Diode Reverse Recovery Charge - 80 180 nC TJ = 25°C See Fig.
- 220 600 TJ = 125''C 16 di/dt =200Aps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 180 - Alps Tu = 25°C See Fig.
During tb - 116 - TJ = 125°C 17
