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CNY174M-CNY17-4M
6-Pin DIP High BVceo Phototransistor Output Optocoupler
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers November 2009 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features Description ■ UL recognized (File # E90700, Vol. 2) The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN ■ VDE recognized phototransistor in a dual in-line package. – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transfer ratio in select groups ■ High BV : 70V minimum (CNY17XM, CNY17FXM, CEO MOC810XM) ■ Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation. Package Outlines ■ Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls Schematics 1 6 1 6 ANODE NC ANODE BASE CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR 3 3 NC 4 EMITTER NC 4 EMITTER CNY17F1M/2M/3M/4M CNY171M/2M/3M/4M MOC8106M/7M ©2006 CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1