CMH04 ,High efficiency diode (HED)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
CMH05A ,High efficiency diode (HED)absolute maximum ratings, which are rated values and must not be exceeded during operation, even fo ..
CMH07 ,High efficiency diode (HED)absolute maximum ratings, which are rated values and must not be exceeded during operation, even fo ..
CMH08 ,High efficiency diode (HED)absolute maximum ratings, which are rated values and must not be exceeded during operation, even fo ..
CMH08A ,High efficiency diode (HED)absolute maximum ratings, which are rated values and must not be exceeded during operation, even fo ..
CMH192 , GaAs MMIC
CS4344-DZZ , 10-PIN, 24-BIT, 192KHz STEREO D/A CONVERTER
CS4345-CZZ , 10-PIN, 24-BIT, 192KHz STEREO D/A CONVERTER
CS4345-CZZ , 10-PIN, 24-BIT, 192KHz STEREO D/A CONVERTER
CS4345-CZZ , 10-PIN, 24-BIT, 192KHz STEREO D/A CONVERTER
CS4348-CZZ , 10-PIN, 24-BIT, 192KHz STEREO D/A CONVERTER
CS4349-CZZ , 192 kHz DAC w/ Volume Control and 1 Vrms @ 3.3 V
CMH04
High efficiency diode (HED)
CMH04 TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH04 Switching Mode Power Supply Applications • Repetitive peak reverse voltage: VRRM = 200 V Average forward current: IF (AV) = 1.0 A Low forward voltage: VFM=0.98 V (Max)@ IFM = 1.0 A Very Fast Reverse-Recovery Time: trr = 35 ns (Max) Suitable for compact assembly due to small surface-mount package
“M−FLATTM ” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C) Note 1: Ta=26°C Device mounted on a glass-epoxy board board size: 50 mm × 50 mm soldering land: 6 mm ×6 mm
glass-epoxy board thickness: 1.6 mm
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 0.023 g (typ.)
