CLY10 ,Power Amplifier for Mobile Phones (0.... GaAs FET CLY 10Data Sheet• Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 ..
CLY10 ,Power Amplifier for Mobile Phones (0....Characteristics Symbol Limit Values Unit Test Conditionsmin. typ. max.Drain-source I 1.2 1.6 2.4 A ..
CM04RC , COMMON MODE CHOKE COILS (FOR DC AND SIGNAL LINES) SMD TYPE
CM04RC01T , COMMON MODE CHOKE COILS (FOR DC AND SIGNAL LINES) SMD TYPE
CM04RC01T , COMMON MODE CHOKE COILS (FOR DC AND SIGNAL LINES) SMD TYPE
CM04RC01T , COMMON MODE CHOKE COILS (FOR DC AND SIGNAL LINES) SMD TYPE
CR12AM , MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12BM , MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR14-MQP/1GE ,ISO14443-B Reader ICFeatures■ Single 5 V ±500 mV supply voltage■ SO16N package■ Contactless communication16– ISO14443 t ..
CR14-MQP-1GE ,ISO14443-B Reader ICAbsolute maximum ratings . 35Table 9. I²C AC measurement conditions . . . . . 36Table 10. ..
CR14-MQTP/1GE ,ISO14443-B Reader ICCR14ISO14443 type-B contactless coupler chipwith anti-collision and CRC management
CR160 ,Diode Current Reg. 135V 1.76mA 2-Pin TO-206AAS-04234—Rev. D, 02-Jul-013-1CR160 SeriesVishay Siliconix Peak Operating Volta ..
CLY10
Power Amplifier for Mobile Phones (0....
GaAs FETCLY10Data SheetPower amplifier for mobile phonesFor frequencies from 400 MHz to 2.5 GHzWide operating voltage range: 2.7 to 6 VVD=3V, f = 1.8 GHz, POUT = 28.5 dBm typ.High efficiency better 55%
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum RatingsTS is measured on the source lead to the PCB under load.
Thermal Resistance
Electrical CharacteristicsA = 25 °C, unless otherwise specified.
Matching conditions for maximum small signal gain: f = 1.8 GHzSource Match: GMS: MAG = 0.70, ANG – 116°; Load Match: GML: MAG 0.68, ANG – 145°Power matching conditions: f = 1.8 GHz
Source Match: GMS: MAG = 0.70, ANG – 120°; Load Match: GML: MAG 0.68, ANG – 130°
Electrical Characteristics (cont’d)A = 25 °C, unless otherwise specified.
Compression Power vs. Drain-Source
Voltage f = 1.8 GHz; IDS = 0.5 × IDSS
Output Characteristics
Gain and P1 dB vs. Drain Source Voltage, f = 1.8 GHz; IDS = 0.5 × IDSS
Typ. Common Source S-ParametersDS = 5 V, ID = 700 mA, Zo = 50 Ω
Additional S-Parameter available on data disc!
Typ. Common Source S-Parameters (cont’d)DS = 5 V, ID = 700 mA, Zo = 50 Ω
