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CHL8510CRTCHILN/a41575avai12V High Efficiency MOSFET Driver with Variable Gate Drive


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CHL8510CRT
12V High Efficiency MOSFET Driver with Variable Gate Drive
International
TOR Rectifier
12V High Performance Gate Driver
IIB3N30
GHL85‘10
FEATURES
q Drives both high-side and Iow-side MOSFETs in a
synchronous buck configuration
q Large drivers designed to drive 6nF server class FETs
o Low-side driver - 4A source / 6A sink
C) High-side driver - 3A source / 4A sink
0 Transition times & propagation delays < 20ns
q Independent variable gate drive voltage for both
high- and Iow-side drivers from 4.5V to 13.2V
o Improves efficiency
0 Compatible with IR controller VGD feature
q Integrated bootstrap diode
o Reduces external component count
q Capable of high switching frequencies from 200kHz
up to lMHz
o Configurable PWM modes of operation
0 IR Active Tri-Level (ATL), disables both MOSFETs
in 30ns with no hold-off time
C) Generic Tri-State PWM with hold-off
q Adaptive non-overlap protection minimizes diode
conduction time
q Input supply under voltage protection
q Thermally enhanced 10-pin DFN package
q Lead free RoHS compliant package, MSL level 1
APPLICATIONS
0 Multiphase synchronous buck converter for
Server and desktop computers using Intelo and
AMDo VR solutions
q High efficiency and compact VRM
q High current DC/DC converters
DESCRIPTION
The |R3537/CHL8510 is a high efficiency gate driver which
can switch both high-side and low-side N-channel external
MOSFETs in a synchronous buck converter. It is intended
for use with International Rectifier's Digital PWM
controllers to provide a total voltage regulator (VR)
solution for today's advanced computing applications.
The |R3537/CHL8510 low-side driver is capable of rapidly
switching large MOSFETs with low RDSM) and large input
capacitance used in high efficiency designs.
The |R3537/CHL8510 features individual control of
both the high-and Iow-side gate drive voltages from
4.5V to 13.2V. This enables the optimization of switching
and conduction losses in the external MOSFET; When
used with IR's proprietary Variable Gate Drive (VGD)
technology, a significant improvement in efficiency is
observed across the entire load range.
The |R3537/CHL8510 can be configured to drive both the
high- and low-side switches from the unique IR fast Active
Tri-Level (ATL) PWM signal or a generic tri-state PWM
mode. The IR ATL mode allows the controller to disable
the high- and Iow-side FETs in less than 30ns without the
need for a dedicated disable pin. This improves VR
transient performance, especially during load release.
The integrated bootstrap diode reduces external
component count. The |R3537/CHL8510 also features
an adaptive non-overlap control for shoot-through
protection. This prevents cross conduction of both high-
side and Iow-side MOSFETs and minimizes body diode
conduction time to provide the best in class efficiency.
BASIC APPLICATION
RVcc Raoul C8001
BOOT l
CVch MOSFET
- VCC HLGATE
22:13: .- PWM SWITCH
1oa/e2'ro- MODE IR3537I
VVGD LVCC CHL8510
MOSFET
HVCC LO_GATE
Figure L Basic Applications Circuit
PIN DIAGRAM
Pin 11
Top View
3x3 DFN - 7
i 6 iLo-GATs
Figure 2: |R3537/CHL8510 Package Top View
ll l © 2014 International Rectirer

January 9,2015 l V1.2
International IR35~3v7
. . 12V Hi h Performance Gate Driver
TOR Rectifier g Ctl'n'LlftWlft]
ORDERING INFORMATION
IR3537 M m
DFN 3000 |R3537MTRPBF
PBF - Lead Free DFN 750 IR3537MTRIPBF
TR -Tape and Reel
Package Type (DFN)
CHL8510
DFN I 3000 I CHL8510CRT
T-Tape and Reel
R - Package Type (DFN)
C - Operating Temperature
(Commercial Standard)
ig l © 2014 International Rectifier
January 9,2015 I V1.2
http://www.ltm.com/
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