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CGD942C
870 MHz, 23 dB gain power doubler amplifier
1. Product profile
1.1 General descriptionHybrid amplifier module in a SOT115J package, operating at a supply voltage of V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits High output capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Gold metallization ensures excellent reliability
1.3 Applications CATV systems operating in the 40 MHz to 870 MHz frequency range
1.4 Quick reference data[1] Direct Current (DC).
CGD942C
870 MHz, 23 dB gain power doubler amplifier
Rev. 3 — 29 September 2010 Product data sheetThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data power gain f= 870 MHz 222324dB
Itot total current VB =24V [1]- 450 - mA
NXP Semiconductors CGD942C
870 MHz, 23 dB gain power doubler amplifier
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning input
2, 3 common
5+VB
7, 8 common
9output
Table 3. Ordering informationCGD942C - rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). supply voltage - 30 V
Vi(RF) RF input voltage single tone - 75 dBmV
132 channels flat - 45 dBmV
Tstg storage temperature −40 +100 °C
Tmb mounting base temperature −20 +100 °C
NXP Semiconductors CGD942C
870 MHz, 23 dB gain power doubler amplifier
5. Characteristics[1] Gp at 870 MHz minus Gp at 40 MHz.
[2] Flatness straight line (peak to valley).
[3] 79 NTSC channels (55.25 MHz to 547.25 MHz, 48 dBmV output level) + 53 NTSC channels (553.25 MHz to 997.25 MHz, 38 dBmV
output level).
[4] Vo =48dBmV.
[5] Direct Current (DC).
Table 5. CharacteristicsBandwidth to 870 MHz; VB=24 V (DC); Tmb =35 °C; unless otherwise specified. power gain f = 870 MHz 22 23 24 dB
SLsl slope straight line f = 40 MHz to 870 MHz [1] 1- 2dB flatness of frequency response f = 40 MHz to 870 MHz [2] -0.5 -dB
CTB composite triple beat 79 + 53 flat NTSC channels [3]- −68 −66 dBc
98 flat PAL channels [4]- −66 - dBc
CSO composite second-order distortion 79 + 53 flat NTSC channels [3]- −70 −67 dBc
98 flat PAL channels [4]- −66 - dBc
Xmod cross modulation 79 + 53 flat NTSC channels [3]- −66 −58 dB
RLin input return loss f = 40 MHz to 80 MHz 20 - - dB
f = 80 MHz to 160 MHz 19 - - dB
f = 160 MHz to 320 MHz 18 - - dB
f = 320 MHz to 640 MHz 18 - - dB
f = 640 MHz to 870 MHz 18 - - dB
RLout output return loss f = 40 MHz to 80 MHz 20 - - dB
f = 80 MHz to 160 MHz 19 - - dB
f = 160 MHz to 320 MHz 18 - - dB
f = 320 MHz to 640 MHz 18 - - dB
f = 640 MHz to 870 MHz 18 - - dB noise figure f = 50 MHz - 3.5 5.0 dB
f = 870 MHz - 3.5 5.0 dB
Itot total current VB =24V [5]- 450 - mA
NXP Semiconductors CGD942C
870 MHz, 23 dB gain power doubler amplifier
6. Package outline
Fig 1. Package outline SOT115J
NXP Semiconductors CGD942C
870 MHz, 23 dB gain power doubler amplifier
7. Abbreviations
8. Revision history
Table 6. AbbreviationsCATV Community Antenna TeleVision Direct Current
GaAs Gallium-Arsenide
NTSC National Television Standard Committee
PAL Phase-Alternation Line Radio Frequency
UNC UNified Coarse thread
Table 7. Revision historyCGD942C v.3 20100929 Product data sheet - CGD942C v.2
Modifications:
• Package outline drawings have been updated to the latest version.
Legal texts have been updated.
CGD942C v.2 20091119 Product data sheet - CGD942C v.1
CGD942C v.1 20070607 Product data sheet - -
NXP Semiconductors CGD942C
870 MHz, 23 dB gain power doubler amplifier
9. Legal information
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