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CES520TOSHIBAN/a346000avaiSmall-signal Schottky barrier diode


CES520 ,Small-signal Schottky barrier diodeElectrical Characteristics (Unless otherwise specified, Ta = 25) ) ) )Characteristics Symbol No ..
CES521 ,Small-signal Schottky barrier diodeAbsolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) ) ) )Characteristics Symb ..
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CES520
Small-signal Schottky barrier diode
CES520
Schottky Barrier Diode Silicon Epitaxial
CES520CES520CES520CES520
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low reverse current: IR(2) = 5 µA (max)
(2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages.
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25))))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Measured with a 10ms pulse.
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
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