C122B1 ,SILICON CONTROLLED RECTIFIERSMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Repetitive Peak Off-S ..
C122F ,8A silicon controlled rectifier. Vrrom 50V.MOTOROLA SC I0I00ES/0PT01 El DEIEEII;?E'55 DDWIUSEI ll rbdb/dbb MUIUHULA su (DIODES/OPTO) DE 79 DT- ..
C122F ,8A silicon controlled rectifier. Vrrom 50V.MAXIMUM RATINGSRating Symbol Value UnitRepetitive Peak Off-State Voltage, Note 1 VDRM Volts éRepeti ..
C122F1 ,SCRs 8 AMPERES RMS 50 thru 800 VOLTS**SEMICONDUCTOR TECHNICAL DATA ** ** *Reverse Blocking Triode Thyristors . . . designed primarily f ..
C1237HA , PROTECTOR IC FOR STEREO POWER AMPLIFIER
C1237HA , PROTECTOR IC FOR STEREO POWER AMPLIFIER
CAT28C16AN-20T , 16K-Bit CMOS PARALLEL E2PROM
CAT28C16AWI-20T , 16 kb CMOS Parallel EEPROM
CAT28C17AXI-20T , 16 kb CMOS Parallel EEPROM
CAT28C256 ,256 kb Parallel EEPROMMaximum Ratings are stress ratings only. Functional operation above theRecommended Operating Condit ..
CAT28C257 ,Parallel EEPROM, 256KbMaximum Ratings are stress ratings only. Functional operation above theRecommended Operating Condit ..
CAT28C512LI12 , 512K-Bit CMOS PARALLEL EEPROM
C122B1-C122F1
SILICON CONTROLLED RECTIFIERS
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Reverse Blocking Triode Thyristors. . designed primarily for full-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed. Glass Passivated Junctions and Center Gate Fire for Greater Parameter
Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability Blocking Voltage to 800 Volts Different Leadform Configurations,
Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)
