C106D ,Leaded Thyristor SCRELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
C106D. ,Leaded Thyristor SCRFeatures• Pb−Free Packages are Available*G• Glassivated Surface for Reliability and UniformityA K• ..
C106M ,4A sensitive-gate silicon controlled rectifier. Vrrm 600V.Maximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
C106MG , Sensitive Gate Silicon Controlled Rectifiers
C10A50Z4 , Surface Mount Termination
C10P20FR , Dual Diodes
CAT25020YI-GT3 , 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM
CAT25040LI , 1K/2K/4K SPI Serial CMOS EEPROM
CAT25040VI , 1K/2K/4K SPI Serial CMOS EEPROM
CAT25080VP2I-GT3 , 8-Kb and 16-Kb SPI Serial CMOS EEPROM
CAT25080YI-GT3 , 8-Kb and 16-Kb SPI Serial CMOS EEPROM
CAT25128VI-G , 128-Kb SPI Serial CMOS EEPROM
C106-C106D-C106D.-C106M
SCRs 4 AMPERES RMS 50 thru 600 VOLTS
C106 Series
Preferred DevicesSensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking ThyristorsGlassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
Features Pb−Free Packages are Available* Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability Sensitive Gate Triggering Device Marking: Device Type, e.g., C106B, Date Code
*For additional information on our Pb−Free strategy and soldering details, please
