BZX55C3V0 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODESElectrical Characteristics T =25°C unless otherwise noted AV (V) @ I (Note 1) I (µ A) @ VZ @ I T ..
BZX55C3V3 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES
BZX55C3V3 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES
BZX55-C3V3 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES
BZX55C-3V9 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES
BZX55C43 ,500mW ZENER DIODEBZX55C...Vishay TelefunkenSilicon Epitaxial Planar Z–Diodes
CA3127E ,High Frequency NPN Transistor ArrayFeatures Description• Gain Bandwidth Product (f ). . . . . . . . . . . . . . . . >1GHz The CA3127 c ..
CA3127M ,High Frequency NPN Transistor ArrayFeatures Description• Gain Bandwidth Product (f ). . . . . . . . . . . . . . . . >1GHz The CA3127 c ..
CA3127M96 ,High Frequency NPN Transistor ArrayDYNAMIC CHARACTERISTICSNoise Figure f = 100kHz, R = 500Ω , I = 1mA - 2.2 - dBS CGain-Bandwidth Prod ..
CA3130 ,Op Amp, BiMOS, MOSFET Inputs, CMOS Outputs, 15MHzCA3130, CA3130A®Data Sheet October 2002 FN817.515MHz, BiMOS Operational Amplifier with
CA3130A ,Op Amp, BiMOS, MOSFET Inputs, CMOS Outputs, 15MHz, Improved Input Characteristicsapplications requiring offset-null capability. Terminal provisions are also • High-Input-Impedance ..
CA3130A ,Op Amp, BiMOS, MOSFET Inputs, CMOS Outputs, 15MHz, Improved Input CharacteristicsElectrical Specifications Typical Values Intended Only for Design Guidance, V = ±7.5V, T = 25 CASUP ..
BZX55C39-BZX55C3V0-BZX55C51-BZX55-C51-BZX55C56-BZX55-C56
10V, 0.5W Zener Diode
Zeners BZX55C2V4 - BZX55C91 Zeners BZX55C2V4 - BZX55C91 Tolerance = 5% Absolute Maximum Ratings * T = 25°C unless otherwise noted A Symbol Parameter Value Units P Power Dissipation 500 mW D @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C4.0mW/°C T , T Operating and Storage Temperature Range -65 to +200 °C J STG * These ratings are limiting values above which the serviceability of the diode may be impaired. DO-35 Glass case COLOR BAND DENOTES CATHODE Electrical Characteristics T =25°C unless otherwise noted A V (V) @ I (Note 1) I (μA) @ V Z @ I Test Current Z Z R R I (mA) Z Z ZM Device (Ω) I (mA) (Note 2) Min. Max. Ta = 25°CTa = 125°CV (V) Z R 1 155 BZX55C2V4 2.28 2.56 85 5 50 100 BZX55C2V7 2.50 2.9 85 5 10 50 1 135 BZX55C3V0 2.8 3.2 85 5 4 40 1 125 BZX55C3V3 3.1 3.5 85 5 2 40 1 115 BZX55C3V6 3.4 3.8 85 5 2 40 1 105 BZX55C3V9 3.7 4.1 85 5 2 40 1 95 BZX55C4V3 4.0 4.6 75 5 1 40 1 90 BZX55C4V7 4.4 5.0 60 5 0.5 10 1 85 0.1 2 1 80 BZX55C5V1 4.8 5.4 35 5 BZX55C5V6 5.2 6.0 25 5 0.1 2 1 70 6.6 10 5 0.1 2 2 64 BZX55C6V2 5.8 BZX55C6V8 6.4 7.2 8 5 0.1 2 3 58 BZX55C7V5 7.0 7.9 7 5 0.1 2 5 53 BZX55C8V2 7.7 8.7 7 5 0.1 2 6 47 BZX55C9V1 8.5 9.6 10 5 0.1 2 7 43 BZX55C10 9.5 10.6 15 5 0.1 2 7.5 40 BZX55C11 10.4 11.6 20 5 0.1 2 8.5 36 BZX55C12 11.4 12.7 20 5 0.1 2 9 32 BZX55C13 12.4 14.1 26 5 0.1 2 10 29 BZX55C15 13.8 15.6 30 5 0.1 2 11 27 BZX55C16 15.3 17.1 40 5 0.1 2 12 24 BZX55C18 16.8 19.1 50 5 0.1 2 14 21 BZX55C20 18.8 21.1 55 5 0.1 2 15 20 BZX55C22 20.8 23.3 55 5 0.1 2 17 18 BZX55C24 22.8 25.6 80 5 0.1 2 18 16 BZX55C27 25.1 28.9 80 5 0.1 2 20 14 BZX55C30 28.0 32.0 80 5 0.1 2 22 13 BZX55C33 31.0 35.0 80 5 0.1 2 24 12 BZX55C36 34.0 38.0 80 5 0.1 2 27 11 BZX55C39 37.0 41.0 90 2.5 0.1 5 28 10 ©2004 BZX55C2V4 - BZX55C91, Rev. B1
