BZW04-58RL ,TRANSILABSOLUTE MAXIMUM RATINGS (T = 25°C)ambSymbol Parameter Value UnitP Peak pulse power dissipation (se ..
BZW04-5V8 ,Unidirectional and bidirectional Transient Voltage Suppressor DiodesABSOLUTE MAXIMUM RATINGS (T = 25°C)ambSymbol Parameter Value UnitP Peak pulse power dissipation (se ..
BZW04-64B ,Conductor Holdings Limited - TRANSIENT VOLTAGE SUPPRESSOR
BZW04-78 , Unidirectional and bidirectional Transient Voltage Suppressor Diodes
BZW04-78 , Unidirectional and bidirectional Transient Voltage Suppressor Diodes
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CA3045 ,General Purpose NPN Transistor ArraysFeatures• Two Matched TransistorsThe CA3045 and CA3046 each consist of five general-V Match . . . . ..
CA3045F ,General Purpose NPN Transistor ArraysFeatures• Two Matched TransistorsThe CA3045 and CA3046 each consist of five general-V Match . . . . ..
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BZW04-58RL
TRANSIL
BZW04-5V8/376
BZW04-5V8B/376BTRANSILTM PEAK PULSE POWER: 400W (10/1000μs) STAND-OFF VOLTAGE RANGE:
From 5.8Vto 376V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED
FEATURES
Note1: Fora surge greater than the maximum values,the diodewillfailin short-circuit.
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
DESCRIPTIONTransil diodes provide high overvoltage protection clamping action. Their instantaneous response transient overvoltages makes them particu-
larly suitedto protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
THERMAL RESISTANCES
BZW04-xx
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
BZW04-xx
Note2: Pulse test:tp <50ms.
Note3: ΔVBR= αT* (Tamb-25)* VBR(25°C)
Note4: VR=0V,F=1 MHz.For bidirectional types,
capacitance valueis dividedby2
Fig.1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
%IPP t
100
BZW04-xx
0.001 0.01 0.1 1 10 100
1E3
1E2
1E1
1E5
1E4 (W)PP
Fig.2: Peak pulse power versus exponential pulse duration.
0.1 1 10 100 1000
V(V)CL
Fig.3: Clamping voltage versus peak pulse current.
Exponential waveform tp =20 μs________=1 ms——————-=10 ms...............
Note: The curvesof the figure3 are specifiedfora junction temperatureof 25°C before surge.
The given results maybe extrapolatedfor other junction temperaturesby using the following formula:ΔVBR=αT* (Tamb -25)* VBR (25°C).
For intermediate voltages, extrapolate the given results.
BZW04-xx
0.01 0.1 1 10 100 10001
Zth (j-a) ( C/W)°
Fig.6: Transient thermal impedance junction ambi-
ent versus pulse duration (For FR4 PC Board
withL lead= 10mm).
Fig. 5:Peak forward voltagedrop versuspeak forward
current (typical values for unidirectional types).
Note: Multiplyby2for units with VBR> 220V.
(pF)
110 10010
Fig. 4b: Capacitance versus reverse applied
voltage for bidirectional types (typical values).
(pF) 10 1001
Fig. 4a: Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig.7: Relative variationof leakage current
versus junction temperature.
BZW04-xx
Packaging:standard packagingis intape and reel.
PACKAGE MECHANICAL DATADO-15 (Plastic)
Weight= 0.4g.
MARKING: Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
Informationfurnishedis believedtobeaccurateand reliable.However, STMicroelectronics assumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patentsorotherrightsof third partieswhich may result fromitsuse. Nolicenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice.Thispublication supersedesand replacesall information previouslysupplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
approvalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2003 STMicroelectronics- Printedin Italy-All rights reserved.
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