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BZV47C15-BZV47C200
2W ZENER DIODES
VOLTAGERANGE: 5.1V to200V
HERMETICALLY SEALED PLASTICCASE:
F126 PACKAGE
HIGH SURGECAPABILITY:55W (10 ms).
FEATURES
F126
Symbol Parameter Value Unit Power dissipationon infiniteheatsink Tamb =55°C2 W
Tstg Storage temperaturerange
Maximumjunction temperature65to+ 175
175 Maximumlead temperaturefor soldering during 10sat 5mm
fromcase
230 °C
ABSOLUTE RATINGS (Tamb= 25°C)
DESCRIPTIONW silicon Zener diodes.
January 1998 Ed:2
BZV47C5V1 / 200 ZENER DIODES
Symbol Parameter Value UnitRth(j-l) Junctionto lead 60 °C/W
Rth (j-a) Junctionto ambienton printed circuiton recommended pad
layout
100 °C/W
THERMAL RESISTANCES1/4
TYPES VZT @IZT rZK/IZK IZT ∝VZ
IR /VR VR IZM IZSMmin. max. max. typ. max. Tamb=55°C
(1) (1) (1) (2) (3) Ω mA 10-4/°C μAV mA A
BZV47C5V1 4.8 5.4 5 100 1 5 1 370 7.8
BZV47C5V6 5.2 6 2 100 2.5 5 1 330 7.1
BZV47C6V2 5.8 6.6 2 100 3.2 5 1 300 6.4
BZV47C7V5 7 7.9 2 100 4.5 5 2 250 5.4
BZV47C10 9.4 10.6 4 50 5.5 5 7.6 185 4
BZV47C12 11.4 12.7 7 50 6.5 1 9.1 155 3.3
BZV47C15 13.8 15.6 10 50 7 1 11.4 130 2.7
BZV47C18 16.8 19.1 15 25 7.5 0.5 13.7 105 2.2
BZV47C20 18.8 21.2 15 25 7.5 0.5 15.2 94 2
BZV47C22 20.8 23.3 15 25 8 0.5 16.7 86 1.8
BZV47C24 22.8 25.6 15 25 8 0.5 18.2 78 1.7
BZV47C27 25.1 28.9 15 25 8.5 0.5 20.5 69 1.5
BZV47C30 28 32 15 25 8.5 0.5 22.8 62 1.3
BZV47C36 34 38 40 10 8.5 0.5 27.4 52 1.1
BZV47C39 37 41 40 10 9 0.5 29.6 48 1
BZV47C47 44 50 45 10 9 0.5 35.7 40 0.85
BZV47C68 64 72 80 10 9 0.5 51.7 27 0.59
BZV47C100 94 106 200 5 9 0.5 76 18 0.4
BZV47C150 138 156 300 5 9.5 0.5 114 12.8 0.27
BZV47C200 188 212 350 5 9.5 0.5 152 9.4 0.20
Note1: Pulse test:tp≤ 50ms
Note2:On infiniteheatsink:L= 10mm
Note3: rectangularwaveform(tp =10ms)
Forwardvoltage drop:VF ≤1.2V (Tamb= 25°C,IF =500mA)
ELECTRICALCHARACTERISTIC (Tamb= 25°C)
Fig.2 :Thermal resistance versus lead length.
Fig.1: Power dissipation versus ambient
temperature.
BZV47C5V1/ BZV47C2002/4
Fig.4: Junction capacitance versus reverse
voltageapplied (typical values).
Fig.3: Relative variationof thermal impedance
junctionto ambient versus pulse duration (PC
board FR4, Lleads= 10mm).
Fig.5: Peak forward current versus peak forward
voltage drop (typical values). 10 100 2001E-3
1E-2
1E-1
1E+0
1E+1
1E+2
I(μA)R= 150°C
VR= 0.75*VZT
VZT (V)
Fig.6: Leakage current versus regulation volt-
age (typical values).
Fig.7: Differential resistance versus regulation
voltage (typical values).
Fig.8: Peak pulse power versus pulse duration
(rectangularwaveform, maximum values).
BZV47C5V1/ BZV47C2003/4
F126 (Plastic)
Packaging: standard packagingisin tapeand reel.
PACKAGE MECHANICAL DATA
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max. 6.05 6.20 6.35 0.238 0.244 0.250 26 31 1.024 1.220 2.95 3.00 3.05 0.116 0.118 0.120 0.76 0.81 0.86 0.030 0.032 0.034 1.27 0.050
Note1: Theleadisnotcontrolled withinzoneL1.
Weight= 0.40g.
MARKING: Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
Information furnishedis believedtobe accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsibilityforthe
consequencesofuseof such informationnorfor any infringementof patentsor other rightsof third parties which mayresult from itsuse.No
licenseis grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics.Specifications mentionedthis publication aresubjectto changewithout notice. This publication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedforuse ascritical componentsinlife supportdevicesor systems withoutexpress
writtenapprovalof SGS-THOMSONMicroelectronics. 1998 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
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ORDER CODE
BZV47C 5V1Type NominalVoltage
BZV47C5V1/ BZV47C2004/4
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