BZT52H-C8V2 ,Single Zener diodes in a SOD123F packageThermal characteristics Table 6.
BZT52H-C8V2 ,Single Zener diodes in a SOD123F packageGeneral descriptionGeneral-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted De ..
BZT55C2V4 ,ZENER DIODESFeatures
BZT52H-B5V1-BZT52H-C11-BZT52H-C12-BZT52H-C15-BZT52H-C16-BZT52HC18-BZT52H-C22-BZT52H-C24-BZT52H-C27-BZT52H-C2V4-BZT52H-C30-BZT52H-C39-BZT52H-C3V0-BZT52H-C3V3-BZT52H-C3V9-BZT52H-C4V7-BZT52H-C5V1-BZT52H-C5V6-BZT52H-C6V2-BZT52H-C6V8-BZT52H-C8V2
Single Zener diodes in a SOD123F package
1. Product profile
1.1 General descriptionGeneral-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
1.3 Applications General regulation functions
1.4 Quick reference data[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
2. Pinning information[1] The marking bar indicates the cathode.
BZT52H series
Single Zener diodes in a SOD123F package
Rev. 3 — 7 December 2010 Product data sheet Total power dissipation: ≤ 830 mW Low differential resistance Wide working voltage range: nominal
2.4 V to 75 V (E24 range) AEC-Q101 qualified Small plastic package suitable for
surface-mounted design
Table 1. Quick reference data forward voltage IF =10mA [1] -- 0.9 V
Ptot total power dissipation Tamb≤25°C [2] -- 375 mW
[3] -- 830 mW
Table 2. Pinning cathode [1] anode
NXP Semiconductors BZT52H series
Single Zener diodes in a SOD123F package
3. Ordering information[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75V.
4. Marking
Table 3. Ordering informationBZT52H-B2V4 to
BZT52H-C75[1] - plastic surface-mounted package; 2 leads SOD123F
Table 4. Marking codes
NXP Semiconductors BZT52H series
Single Zener diodes in a SOD123F package
5. Limiting values[1] tp =100 μs; square wave; Tj =25 °C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). forward current - 250 mA
IZSM non-repetitive peak
reverse current see
Table8, 9
and 10
PZSM non-repetitive peak
reverse power dissipation
[1] -40 W
Ptot total power dissipation Tamb≤25°C [2]- 375 mW
[3]- 830 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 330 K/W
[2] -- 150 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[3] -- 70 K/W
NXP Semiconductors BZT52H series
Single Zener diodes in a SOD123F package
7. Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 7. Characteristics =25 °C unless otherwise specified. forward voltage IF =10mA [1] -- 0.9 V
Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24 =25 °C unless otherwise specified.
2V4 B 2.35 2.45 400 85 50 1 −3.5 0.0 450 6.0
C2.2 2.6
2V7 B 2.65 2.75 500 83 20 1 −3.5 0.0 450 6.0
C2.5 2.9
3V0 B 2.94 3.06 500 95 10 1 −3.5 0.0 450 6.0
C2.8 3.2
3V3 B 3.23 3.37 500 95 5 1 −3.5 0.0 450 6.0
C3.1 3.5
3V6 B 3.53 3.67 500 95 5 1 −3.5 0.0 450 6.0
C3.4 3.8
3V9 B 3.82 3.98 500 95 3 1 −3.5 0.0 450 6.0
C3.7 4.1
4V3 B 4.21 4.39 500 95 3 1 −3.5 0.0 450 6.0
C4.0 4.6
4V7 B 4.61 4.79 500 78 3 2 −3.5 0.2 300 6.0
C4.4 5.0
5V1 B 5.0 5.2 480 60 2 2 −2.7 1.2 300 6.0
C4.8 5.4
5V6 B 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.0
C5.2 6.0
6V2 B 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0
C5.8 6.6
6V8 B 6.66 6.94 80 8 2 4 1.2 4.5 200 6.0
C6.4 7.2
7V5 B 7.35 7.65 80 10 1 5 2.5 5.3 150 4.0
C7.0 7.9
8V2 B 8.04 8.36 80 10 0.7 5 3.2 6.2 150 4.0
C7.7 8.7
NXP Semiconductors BZT52H series
Single Zener diodes in a SOD123F package[1]f=1 MHz; VR =0V.
[2] tp= 100 μs; Tamb =25°C.
9V1 B 8.92 9.28 100 10 0.5 6 3.8 7.0 150 3.0
C8.5 9.6 B 9.8 10.2 70 10 0.2 7 4.5 8.0 90 3.0 9.4 10.6 B 10.8 11.2 70 10 0.1 8 5.4 9.0 85 2.5 10.4 11.6 B 11.8 12.2 90 10 0.1 8 6.0 10.0 85 2.5 11.4 12.7 B 12.7 13.3 110 10 0.1 8 7.0 11.0 80 2.5 12.4 14.1 B 14.7 15.3 110 15 0.05 10.5 9.2 13.0 75 2.0 13.8 15.6 B 15.7 16.3 170 20 0.05 11.2 10.4 14.0 75 1.5 15.3 17.1 B 17.6 18.4 170 20 0.05 12.6 12.4 16.0 70 1.5 16.8 19.1 B 19.6 20.4 220 20 0.05 14 14.4 18.0 60 1.5 18.8 21.2 B 21.6 22.4 220 25 0.05 15.4 16.4 20.0 60 1.25 20.8 23.3 B 23.5 24.5 220 30 0.05 16.8 18.4 22.0 55 1.25 22.8 25.6
Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24 …continued =25 °C unless otherwise specified.
NXP Semiconductors BZT52H series
Single Zener diodes in a SOD123F package[1]f=1 MHz; VR =0V.
[2] tp= 100 μs; Tamb =25°C.
[1]f=1 MHz; VR =0V.
[2] tp= 100 μs; Tamb =25°C.
Table 9. Characteristics per type; BZT52H-B27 to BZT52H-C51 =25 °C unless otherwise specified. B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 50 1.0 25.1 28.9 B 29.4 30.6 250 40 0.05 21 24.4 29.4 50 1.0 28.0 32.0 B 32.3 33.7 250 40 0.05 23.1 27.4 33.4 45 0.9 31.0 35.0 B 35.3 36.7 250 60 0.05 25.2 30.4 37.4 45 0.8 34.0 38.0 B 38.2 39.8 300 75 0.05 27.3 33.4 41.2 45 0.7 37.0 41.0 B 42.1 43.9 325 80 0.05 30.1 37.6 46.6 40 0.6 40.0 46.0 B 46.1 47.9 325 90 0.05 32.9 42.0 51.8 40 0.5 44.0 50.0 B 50.0 52.0 350 100 0.05 35.7 46.6 57.2 40 0.4 48.0 54.0
Table 10. Characteristics per type; BZT52H-B56 to BZT52H-C75 =25 °C unless otherwise specified. B 54.9 57.1 375 120 0.05 39.2 52.2 63.8 40 0.3 52.0 60.0 B 60.8 63.2 400 140 0.05 43.4 58.8 71.6 35 0.3 58.0 66.0 B 66.6 69.4 400 160 0.05 47.6 65.6 79.8 35 0.25 64.0 72.0 B 73.5 76.5 400 175 0.05 52.5 73.4 88.6 35 0.20 70.0 79.0
NXP Semiconductors BZT52H series
Single Zener diodes in a SOD123F package
