BYW99W200-BYW99-W200 Fast Delivery |IC PHOENIX CO.,LIMITED

BYW99W200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI 35 AF(RMS)RMS forward current Per diodeI 15 AF ..
BYW99-W200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURESSUITED FOR SMPSA1VERY LOW FORWARD LOSSESKNEGLIGIBLESWITCHING LOSSESHIGH SURGE CURRENT CAPAB ..
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BYW99W200-BYW99-W200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW99P/PI/W
October 1999 Ed:2A
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SOT93
(Plastic)
BYW99P-200
SUITED FOR SMPS
VERY LOWFORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHEENERGY CAPABILITY
INSULATEDVERSIONTOP3I:
Insulatingvoltage= 2500V DC
Capacitance=12pF
DESCRIPTION
FEATURES
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packagedin SOT93, TOP3Ior TO247 this device intendedfor usein low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
isolated
TOP3I
(Plastic)
BYW99PI-200
Symbol Parameter Value Unit
IF(RMS) RMSforward current Per diode 35 A
IF(AV) Average forward current= 0.5
SOT93/ TO247 Tc=120°C Per diode 15 A
TOP3I Tc=115°C Per diode 15
IFSM Surge non repetitiveforward current tp=10ms
sinusoidal
Per diode 200 A
Tstg Storageand junction temperature range - 40to+ 150 40to+ 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 200 V
TO247
(Plastic)
BYW99W-200
1/6
Symbol Test Conditions Min. Typ. Max. Unit* Tj =25°CVR =VRRM 20 μA= 100°C 1.5 mA
VF** Tj= 125°CIF =12A 0.85 V= 125°CIF =25A 1.05 =25°CIF =25A 1.15
Pulse test:*tp=5 ms, δ <2%tp= 380 μs, δ <2% evaluatethe conductionlossesuse the following equation:= 0.65x IF(AV)+ 0.016xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj =25°CIF =0.5A =1A
Irr= 0.25A 25 ns =1A= 30V
dIF/dt= -50A/μs40
tfr Tj =25°CIF =1A
VFR= 1.1xVF=10ns 15 ns
VFP Tj =25°CIF =1A tr=10ns 2 V
RECOVERYCHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c) Junctionto case SOT93/ TO247 Perdiode 1.8 °C/W
Total 1.0
TOP3I Perdiode 2.0
Total 1.25
Rth(c) Coupling SOT93/ TO247 0.2 °C/W
TOP3I 0.5
When the diodes1 and2 are usedsimultaneously:
Tj-Tc(diode1)= P(diode1)x Rth(j-c) (Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES
BYW99P/PI/W
2/6
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10P=10W
P=20W
P=30WM
=tp/T
IM(A)
Fig.2: Peakcurrent versus form factor.
0.1 1 10 100 200
Tj=125Co
IFM(A)
VFM(V)
Fig.3: Forward voltage drop versus forward
current (maximumvalues).
Zth(j-c)(tp.)K=
Rth(j-c)
=0.5
=0.2
=0.1
Single pulse
tp(s)
=tp/T tp
1.0E-03 1.0E-02 1.0E-01 1.0E+00
Fig.4: Relative variationof thermal impedance
junctionto case versuspulse duration. 2.5 5 7.5 10 12.5 15 17.5 200
=0.05 =0.1
=0.2 =0.5
=tp/T tpIF(av)(A) F(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.
0.001 0.01 0.1 101020304050607080100
=0.5 t(s)
IM(A)
Tc=25Co
Tc=60Co
Tc=115Co
Fig.6: Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
0.001 0.01 0.1 102030405060708090100110120130140150160
=0.5 t(s)
IM(A)
Tc=25Co
Tc=75Co
Tc=120Co
Fig.5: Non repetitive surge peak forward current
versus overload duration.
(SOT93, TO247)
BYW99P/PI/W
3/6
20 40 60 80 100 120 140 16001234567891112141516=tp/T tp
=0.5
F(av)(A)ITamb(C)
Rth(j-a)=15 C/Wo
Rth(j-a)=Rth(j-c)
Fig.7 : Average current versus ambient
temperature.= 0.5) (SOT93, TO247) 20 40 60 80 100 120 140 1600123467910111213141516
=tp/T tp
=0.5
F(av)(A)ITamb(C)
Rth(j-a)=15 C/Wo
Rth(j-a)=Rth(j-c)
Fig.8 : Average current versus ambient
temperature.= 0.5)(TOP3I) 10 100100
VR(V)
F=1Mhz Tj=25Co
C(pF)
Fig.9: Junction capacitance versus reverse
voltage applied (Typical values). 10 1000 QRR(nC)
90%CONFIDENCE
IF=IF(av) Tj=100CO
Tj=25CO
dIF/dt(A/us)
Fig.10: Recoverycharges versus dIF/dt.
Tj( C)
QRR;IRM[Tj]/QRR;IRM[Tj=125C] 255075 100 125 1500.00
IRM
QRR
Fig.12: Dynamic parameters versus junction
temperature. 10 1000.0
IRM(A)
dIF/dt(A/us)
90%CONFIDENCE
Tj=100CO
Tj=25CO
IF=IF(av)
Fig.11: Peakreverse current versus dIF/dt.
BYW99P/PI/W
4/6
PACKAGE MECHANICAL DATA
SOT93
Marking: Type number
Cooling method:C
Weight: 5.3g
Recommended torque value: 0.8m.N
Maximum torquevalue: 1.0m.N
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 4.70 4.90 1.185 0.193 1.90 2.10 0.075 0.083 2.50 typ. 0.098 typ. 2.00 typ. 0.078 typ 0.50 0.78 0.020 0.031 1.10 1.30 0.043 0.051 1.75 typ 0.069 typ 2.10 typ. 0.083 typ. 10.80 11.10 0.425 0.437 14.70 15.20 0.279 0.598 12.20 0.480 16.20 0.638 18.0 typ. 0.709 typ. 3.95 4.15 0.156 0.163 31.00 typ. 1.220 typ. 4.00 4.10 0.157 0.161
Marking: Type number
Cooling method:C
Weight: 4.7g
Recommended torque value: 0.8m.N
Maximum torquevalue: 1.0m.N
PACKAGE MECHANICAL DATA
TOP3I (isolated)
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 4.4 4.6 0.173 0.181 1.45 1.55 0.057 0.061 14.35 15.60 0.565 0.614 0.5 0.7 0.020 0.028 2.7 2.9 0.106 0.114 15.8 16.5 0.622 0.650 20.4 21.1 0.815 0.831 15.1 15.5 0.594 0.610 5.4 5.65 0.213 0.222 3.4 3.65 0.134 0.144 4.08 4.17 0.161 0.164 1.20 1.40 0.047 0.055 4.60 typ. 0.181typ
BYW99P/PI/W
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implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice. This publication supersedesand replacesall informationpreviously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
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Marking: Typenumber
Coolingmethod:C
Weight: 4.4g
Recommended torque value: 0.8m.N
Maximum torque value: 1.0m.N
PACKAGE MECHANICAL DATA
TO247F1L2 D
Dia.
F(x3)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max. 4.85 5.15 0.191 0.203 2.20 2.60 0.086 0.102 0.40 0.80 0.015 0.031 1.00 1.40 0.039 0.055 3.00 0.118 2.00 0.078 2.00 2.40 0.078 0.094 3.00 3.40 0.118 0.133 10.90 0.429 15.45 15.75 0.608 0.620 19.85 20.15 0.781 0.793 3.70 4.30 0.145 0.169 18.50 0.728 14.20 14.80 0.559 0.582 34.60 1.362 5.50 0.216 2.00 3.00 0.078 0.118
V5° 5° 60° 60°
Dia. 3.55 3.65 0.139 0.143
BYW99P/PI/W
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Partno	Mfg	Dc	Qty	Available	Descript
BYW99W200	ST	N/a	1500	avai	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW99-W200 \|BYW99W200	ST	N/a	59	avai	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES