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Partno	Mfg	Dc	Qty	Available	Descript
BYW99P-200 \|BYW99P200	ST	N/a	173	avai	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW99PI-200 \|BYW99PI200		N/a	1	avai	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW99W-200 \|BYW99W200	ST	N/a	2089	avai	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

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BYW99P-200-BYW99PI-200-BYW99W-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW99P/PI/W
October 1999 Ed : 2A
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
DESCRIPTION
FEATURES
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, TOP3I or TO247 this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE MAXIMUM RATINGS
1/6
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 μs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x IF(AV) + 0.016 x IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
RECOVERY CHARACTERISTICS
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCES
BYW99P/PI/W
2/6
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10IM(A)
Fig.2 : Peak current versus form factor.
0.1 1 10 100 200
VFM(V)
Fig.3 : Forward voltage drop versus forward
current (maximum values).
1.0E-03 1.0E-02 1.0E-01 1.0E+00
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration. 2.5 5 7.5 10 12.5 15 17.5 20
PF(av)(W)
Fig.1 : Average forward power dissipation versus
average forward current.
0.001 0.01 0.1 10
IM(A)
Fig.6 : Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
0.001 0.01 0.1 1
IM(A)
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
(SOT93, TO247)
BYW99P/PI/W
3/6
20 40 60 80 100 120 140 1600F(av)(A)I
Fig.7 : Average current versus ambient
temperature.
(δ = 0.5) (SOT93, TO247) 20 40 60 80 100 120 140 1600
F(av)(A)I
Fig.8 : Average current versus ambient
temperature.
(δ = 0.5) (TOP3I)
Fig.9 : Junction capacitance versus reverse
voltage applied (Typical values).
Fig.10 : Recovery charges versus dIF/dt.
QRR;IRM[Tj]/QRR;IRM[Tj=125C] 25 50 75 100 125 1500.00
Fig.12 : Dynamic parameters versus junction
temperature.
Fig.11 : Peak reverse current versus dIF/dt.
BYW99P/PI/W
4/6
PACKAGE MECHANICAL DATA
SOT93
Marking : Type number
Cooling method : C
Weight : 5.3 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Marking : Type number
Cooling method : C
Weight : 4.7 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
PACKAGE MECHANICAL DATA
TOP3I (isolated)
BYW99P/PI/W
5/6
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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Marking : Type number
Cooling method : C
Weight : 4.4 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
PACKAGE MECHANICAL DATA
TO247
BYW99P/PI/W
6/6

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