BYW98-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODEFEATURES AND BENEFITSn Very low conduction lossesn Negligible switching lossesn Low forward and rev ..
BYW98-200RL ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODEFEATURES AND BENEFITSn Very low conduction lossesn Negligible switching lossesn Low forward and rev ..
BYW99P-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURESSUITED FOR SMPSA1VERY LOW FORWARD LOSSESKNEGLIGIBLE SWITCHING LOSSESHIGH SURGE CURRENT CAPA ..
BYW99PI-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI 35 AF(RMS)RMS forward current Per diodeI 15 AF ..
BYW99W200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI 35 AF(RMS)RMS forward current Per diodeI 15 AF ..
BYW99-W200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURESSUITED FOR SMPSA1VERY LOW FORWARD LOSSESKNEGLIGIBLESWITCHING LOSSESHIGH SURGE CURRENT CAPAB ..
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BYW98-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
BYW98-200HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE Very low conduction losses Negligible switching losses Low forward and reverse recovery times
FEATURES AND BENEFITSLow voltage drop and rectifier suitedfor switching
mode base drive and transistor circuits.
DESCRIPTION Oninfinite heatsink with 10mm lead length.
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
BYW98-200Pulse test:*tp=5ms,δ <2%tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equations:
P=0.75xIF(AV)+ 0.04IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
RECOVERY CHARACTERISTICSOn infinite heatsink with 10mm lead length.
THERMAL PARAMETERS
BYW98-2000.0 0.5 1.0 1.5 2.0 2.50.0
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.0.0
3.5
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature (δ=0.5). 10 1520250
Rth(°C/W)
Fig.3: Thermal resistance versus lead length.
1E-1 1E+0 1E+1 1E+20.01
Zth(j-a)/Rth(j-a)
Fig.4: Variationof thermal impedance junctionto
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)= 35μm). 10 100 20010
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.10
70.00
IFM(A)
Fig. 5: Forward voltage drop versus forward
current (maximum values).
BYW98-200 10 1000.0
2.5
IRM(A)
Fig. 8: Peak reverse recovery current versus
dIF/dt. 10 1000
trr(ns)
Fig.7: Reverse recovery time versus dIF/dt. 50 75 100 125 150100
Fig. 9: Dynamic parameters versus junction
temperature.
BYW98-200
PACKAGE MECHANICAL DATADO-201AD
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STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
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http:// White band indicates cathode Epoxy meets UL94,V0
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