BYW81P-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURESAn SUITED FOR SMPSn VERY LOW FORWARD LOSSESNC2n NEGLIGIBLE SWITCHING LOSSES D PAK(Plastic)n ..
BYW95A ,AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES
BYW95A ,AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES
BYW95A ,AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES
BYW95A ,AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES
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BYW81P-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW81G-200
BYW81P-200 / BYW81PI-200HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION:
Insulating voltage= 2500 VRMS
Capacitance=7pF
DESCRIPTION
FEATURESSingle chip rectifier suited for switchmode power
supply and high frequency DCto DC converters.
Packagedin TO-220AC and D²PAK, this deviceis
intended for usein low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE MAXIMUM RATINGS
BYW81P-200 / BYW81PI-200 / BYW81G-200Pulse test:tp=5 ms, duty cycle<2%tp= 380μs, duty cycle<2%
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
RECOVERY CHARACTERISTICS
THERMAL RESISTANCE
BYW81P-200 / BYW81PI-200 / BYW81G-200
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig.2: Peak current versus form factor.
0.1 1 10 100 200
VFM(V)
Fig. 3: Forward voltage drop versus forward
current (maximum values).
1.0E-03 1.0E-02 1.0E-01 1.0E+00
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration.
2.5 5 7.5 10 12.5 15 17.5 200.0
20.0 F(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.
0.001 0.01 0.1 10
IM(A)
Fig.6: Non repetitive surge peak forward current
versus overload duration.
(BYW81PI/ BYW81G)
0.001 0.01 0.1 10
IM(A)
Fig.5: Non repetitive surge peak forward current
versus overload duration.
(BYW81P)
BYW81P-200 / BYW81PI-200 / BYW81G-200 20 40 60 80 100 120 140 1600
F(av)(A)I
Fig. 7: Average current versus ambient
temperature.
(duty cycle: 0.5) (BYW81P)
20 40 60 80 100 120 140 1600
F(av)(A)I
Fig. 8: Average current versus ambient
temperature.
(duty cycle: 0.5) (BYW81PI/ BYW81G)
Fig. 9: Junction capacitance versus reverse
voltage applied (Typical values).
Fig. 10: Recovery charges versus dIF/dt.
QRR;IRM[Tj]/QRR;IRM[Tj=125C] 25 50 75 100 125 1500.00
Fig. 12: Dynamic parameters versus junction
temperature.
Fig. 11: Peak reverse current versus dIF/dt.
BYW81P-200 / BYW81PI-200 / BYW81G-200 Marking: Type number Cooling method:C Weight: 2.2g Recommended torque value: 0.8m.N Maximum torque value: 1.0m.N
PACKAGE MECHANICAL DATATO-220AC (JEDEC outline)
Marking: Type number Cooling method:C Weight: 1.9g Recommended torque value: 0.8m.N Maximum torque value: 1.0m.N
PACKAGE MECHANICAL DATATO-220AC (isolated)
BYW81P-200 / BYW81PI-200 / BYW81G-200Information furnishedis believedtobeaccurateandreliable.However,STMicroelectronics assumesno responsibility fortheconsequencesof
useofsuchinformationnorfor anyinfringementof patentsorother rightsof third parties whichmayresultfromits use.Nolicenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
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PACKAGE MECHANICAL DATA2 PAK (Plastic)
FOOT PRINT DIMENSIONS (in millimeters)D²PAK Cooling method:by conduction (methodC)