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BYW29EX-200
Rectifier diodes ultrafast, rugged
Philips Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
GENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated epitaxial rectifier
SYMBOL PARAMETER MAX. MAX. UNITdiodesina full pack plastic envelope,featuring low forward voltage drop,
BYW29EX- 150 200ultra-fast recovery times, soft recovery VRRM Repetitive peak reverse 150 200 V
characteristic and guaranteed reverse voltagesurge and ESD capability. They are VF Forward voltage 0.895 0.895 V
intendedforusein switched mode power IF(AV) Forward current 8 8 A
supplies and high frequency circuitsin trr Reverse recovery time 25 25 nsgeneral where low conduction and IRRM Repetitive peak reverse 0.2 0.2 A
switching losses are essential. current
PINNING - SOD113 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION cathode anode
case isolated
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-150 -200VRRM Repetitive peak reverse voltage - 150 200 V
VRWM Crest working reverse voltage - 150 200 V Continuous reverse voltage - 150 200 V
IF(AV) Average forward current1 square wave; δ = 0.5;
Ths ≤ 106 ˚C - 8 A
sinusoidal; a = 1.57;
Ths ≤ 109 ˚C - 7.3 A
IF(RMS) RMS forward current - 11.3 A
IFRM Repetitive peak forward current t = 25 μs; δ = 0.5; - 16 A
Ths ≤ 106 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied
VRWM(max)2 tI2 t for fusing t = 10 ms - 32 A2s
IRRM Repetitive peak reverse current tp = 2 μs; δ = 0.001 - 0.2 A
IRSM Non-repetitive peak reverse tp = 100 μs - 0.2 A
current
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
case
Philips Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTICThs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITVisol R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-hs Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
Rth j-a Thermal resistance junction to in free air - 55 - K/W
ambient
STATIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 8 A; Tj = 150˚C - 0.80 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V Reverse current VR = VRWM; Tj = 100 ˚C - 0.2 0.6 mA
VR = VRWM -2 10 μA
DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs- 4 11 nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 25 ns
-dIF/dt = 100 A/μs
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 15 20 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs- 1 - V
Philips Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Circuit schematic for trr2
Fig.4. Definition of trr2
Fig.5. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.6. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = formRFR
0.5A
time
timeFF 2468 10 120
IF(AV) / A
PF / W
Ths(max) / C
shunt
Current
D.U.T.
Voltage Pulse Source 23 456 780
IF(AV) / A
PF / W Ths(max) / C
150
Philips Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C.
Fig.8. Maximum Irrm at Tj = 25 ˚C.
Fig.9. Typical and maximum forward characteristic
Fig.10. Maximum Qs at Tj = 25 ˚C.
Fig.11. Transient thermal impedance; Zth j-hs = f(tp).
trr / ns
dIF/dt (A/us)
Qs / nC
Irrm / A 10 100
-dIF/dt (A/us)
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W) 1 2
30
20
10
0.5 1.5
VF / V
Philips Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.12. SOD113; The seating plane is electrically isolated from all terminals.
Notes1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
seating
plane
max
3 max.
not tinned
max.
min.
Recesses (2x)
0.8 max. depth
1.0 (2x)
Philips Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
DEFINITIONS
Data sheet statusObjective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.