IC Phoenix
 
Home ›  BB38 > BYW29ED-200,Rectifier diodes ultrafast, rugged
BYW29ED-200 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BYW29ED-200 |BYW29ED200飞利浦N/a10000avaiRectifier diodes ultrafast, rugged


BYW29ED-200 ,Rectifier diodes ultrafast, ruggedLIMITING VALUESYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV Electrostatic discharge Human body model; ..
BYW29EX-200 ,Rectifier diodes ultrafast, ruggedLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
BYW29EX-200 ,Rectifier diodes ultrafast, rugged
BYW29F-100 ,Rectifier diodes ultrafast
BYW29F200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI 16 AF(RMS)RMS forward currentIF(AV) 8ATO-220AC ..
BYW29F-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
C5001 , Low Skew Multiple Frequency PCI Clock Generator with EMI Reducing SSCG.
C505 ,8-Bit Single-Chip MicrocontrollerData Sheet, Dec. 2000C505C505CC505AC505CA8-Bit Single-Chip MicrocontrollerMicrocontrollersNe ve r ..
C50A50Z4 , Surface Mount Termination 50 Watts, 50Ω
C5100 , 5000 WATTS (AC) DC/D CSINGLE OUTPUT
C5100 , 5000 WATTS (AC) DC/D CSINGLE OUTPUT
C5122 , CB Transceiver PLL IC


BYW29ED-200
Rectifier diodes ultrafast, rugged
Philips Semiconductors Product specification
Rectifier diodes BYW29EB, BYW29ED series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop VR = 150 V/ 200 V
• Fast switching • Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability
• High thermal cycling performance IF(AV) = 8 A• Low thermal resistance
IRRM = 0.2 Arr ≤ 25 ns
GENERAL DESCRIPTION

Ultra-fast,epitaxial rectifier diodesintendedfor useas outputrectifiers inhigh frequencyswitched mode power supplies.
The BYW29EB seriesis suppliedin the SOT404 surface mounting package.
The BYW29ED seriesis suppliedin the SOT428 surface mounting package.
PINNING SOT404 SOT428
PIN DESCRIPTION
no connection cathode1 anode
tab cathode
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYW29EB/ BYW29ED -150 -200

VRRM Peak repetitive reverse - 150 200 V
voltage
VRWM Working peak reverse - 150 200 V
voltage Continuous reverse voltage - 150 200 V
IF(AV) Average rectified forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A
current
IFRM Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A
current
IFSM Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied VRRM(max)
IRRM Peak repetitive reverse tp = 2 μs; δ = 0.001 - 0.2 A
surge current
IRSM Peak non-repetitive reverse tp = 100 μs - 0.2 A
surge current Operating junction - 150 ˚C
temperature
Tstg Storage temperature - 40 150 ˚C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.

tab 3
tab
Philips Semiconductors Product specification
Rectifier diodes BYW29EB, BYW29ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance junction - - 2.7 K/W
to mounting base
Rth j-a Thermal resistance junction SOT404 and SOT428 packages, pcb - 50 - K/W
to ambient mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Forward voltage IF = 8 A; Tj = 150˚C - 0.8 0.895 VIF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V Reverse current VR = VRWM -2 10 μAVR = V RWM; Tj = 100˚C - 0.2 0.6 mA
Qrr Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs- 4 11 nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/μs20 25 nstrr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 15 20 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs- 1 - V
Philips Semiconductors Product specification
Rectifier diodes BYW29EB, BYW29ED series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Circuit schematic for trr2
Fig.4. Definition of trr2
Fig.5. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.6. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = formRFR
0.5A
time
timeFF 2468 10 120
IF(AV) / A
PF / W
Tmb(max) / C
shunt
Current
D.U.T.
Voltage Pulse Source 23 456 780
IF(AV) / A
PF / W Tmb(max) / C
150
Philips Semiconductors Product specification
Rectifier diodes BYW29EB, BYW29ED series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C.
Fig.8. Maximum Irrm at Tj = 25 ˚C.
Fig.9. Typical and maximum forward characteristic
Fig.10. Maximum Qs at Tj = 25 ˚C.
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
trr / ns
dIF/dt (A/us)
Qs / nC
Irrm / A 10 100
-dIF/dt (A/us)
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W) 1 2
30
20
10
0.5 1.5
VF / V
Philips Semiconductors Product specification
Rectifier diodes BYW29EB, BYW29ED series
ultrafast, rugged
MECHANICAL DATA

Dimensions in mm
Net Mass: 1.4 g
Fig.12. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS

Dimensions in mm
Fig.13. SOT404 : soldering pattern for surface mounting.
Notes

1. Epoxy meets UL94 V0 at 1/8".
4.5 max
10.3 max
3.8
Philips Semiconductors Product specification
Rectifier diodes BYW29EB, BYW29ED series
ultrafast, rugged
MECHANICAL DATA

Fig.14. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS

Dimensions in mm
Fig.15. SOT428 : minimum pad sizes for surface mounting.
Notes

1. Plastic meets UL94 V0 at 1/8".
2.5
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED