BYW29E150 ,Ultrafast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS ..
BYW29E-150 ,Ultrafast power diodeLIMITING VALUESYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV Electrostatic discharge Human body model; ..
BYW29E-150 ,Ultrafast power diodeLIMITING VALUESYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV Electrostatic discharge Human body model; ..
BYW29E-150 ,Ultrafast power diodeGENERAL DESCRIPTION PINNING SOD59 (TO220AC)Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTIONta ..
BYW29E-150 ,Ultrafast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYW29E-150. ,Ultrafast power diodeFEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop V = 100V/ 150 V/ 200 VR Fast switching ..
C4-Y1.5R , Power Inductors
C4-Y1.5R , Power Inductors
C5001 , Low Skew Multiple Frequency PCI Clock Generator with EMI Reducing SSCG.
C505 ,8-Bit Single-Chip MicrocontrollerData Sheet, Dec. 2000C505C505CC505AC505CA8-Bit Single-Chip MicrocontrollerMicrocontrollersNe ve r ..
C50A50Z4 , Surface Mount Termination 50 Watts, 50Ω
C5100 , 5000 WATTS (AC) DC/D CSINGLE OUTPUT
BYW29E-100-BYW29E150-BYW29E-150-BYW29E-150.-BYW29E200-BYW29E-200
Rectifier diodes ultrafast, rugged
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop VR = 100V/ 150 V/ 200 V
Fast switching Soft recovery characteristic VF ≤ 0.895 V
Reverse surge capability
High thermal cycling performance IF(AV) = 8 A Low thermal resistance
IRRM ≤ 0.2 Arr ≤ 25 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)Ultra-fast, epitaxial rectifier diodes
PIN DESCRIPTIONintendedfor useas output rectifiers high frequency switched mode 1 cathode
power supplies. anode
The BYW29E seriesis suppliedin
the conventional leaded SOD59 tab cathode
(TO220AC) package.
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYW29E -100 -150 -200VRRM Peak repetitive reverse - 100 150 200 V
voltage
VRWM Working peak reverse - 100 150 200 V
voltage Continuous reverse voltage - 100 150 200 V
IF(AV) Average rectified forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A
current
IFRM Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A
current
IFSM Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied VRRM(max)
IRRM Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current
IRSM Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current Operating junction - 150 ˚C
temperature
Tstg Storage temperature - 40 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
tab
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance junction - - 2.7 K/W
to mounting base
Rth j-a Thermal resistance junction in free air - 60 - K/W
to ambient
ELECTRICAL CHARACTERISTICSTj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 8 A; Tj = 150˚C - 0.8 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V Reverse current VR = VRWM -2 10 µA
VR = VRWM; Tj = 100˚C - 0.2 0.6 mA
Qrr Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 11 nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs20 25 ns
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 15 20 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs- 1 - V
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Circuit schematic for trr2
Fig.4. Definition of trr2
Fig.5. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.6. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = formRFR
0.5A
time
timeFF 2468 10 120
IF(AV) / A
PF / W
Tmb(max) / C
shunt
Current
D.U.T.
Voltage Pulse Source 23 456 780
IF(AV) / A
PF / W Tmb(max) / C
150
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C.
Fig.8. Maximum Irrm at Tj = 25 ˚C.
Fig.9. Typical and maximum forward characteristic
Fig.10. Maximum Qs at Tj = 25 ˚C.
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
trr / ns
dIF/dt (A/us)
Qs / nC
Irrm / A 10 100
-dIF/dt (A/us)
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W) 1 2
30
20
10
0.5 1.5
VF / V
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.12. TO220AC; pin 1 connected to mounting base.
Notes1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220 SOD59
Philips Semiconductors Product specification
Rectifier diodes BYW29E series
ultrafast, rugged
DEFINITIONS
Data sheet statusObjective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
