BYW29FP-200 ,HIGH EFFICIENCY FAST RECOVERY DIODESBYW29/F/FP/G-200®HIGH EFFICIENCY FAST RECOVERY DIODESMAIN PRODUCT CHARACTERISTICSI 8A AKF(AV)V 200 ..
BYW29G-200 ,HIGH EFFICIENCY FAST RECOVERY DIODESABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Repetitive peak reverse voltage 200 VRRMI RMS ..
BYW34 ,MINIATURE GLASS PASSIVATED FAST SWITCHING RECTIFIERRev. 5, 07-Jan-03 3Z – Thermal Resistance for Pulse Cond. (K/W)P – Reverse Power Dissipation ..
BYW4200B-TR ,HIGH EFFICIENCY FAST RECOVERY DIODESapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
BYW51-150 ,Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 150V.
BYW51-150 ,Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 150V.
C5001 , Low Skew Multiple Frequency PCI Clock Generator with EMI Reducing SSCG.
C505 ,8-Bit Single-Chip MicrocontrollerData Sheet, Dec. 2000C505C505CC505AC505CA8-Bit Single-Chip MicrocontrollerMicrocontrollersNe ve r ..
C50A50Z4 , Surface Mount Termination 50 Watts, 50Ω
C5100 , 5000 WATTS (AC) DC/D CSINGLE OUTPUT
C5100 , 5000 WATTS (AC) DC/D CSINGLE OUTPUT
C5122 , CB Transceiver PLL IC
BYW29-200-BYW29F-200-BYW29FP-200 -BYW29G-200
FAST EFFICIENT PLASTIC RECTIFIER
BYW29/F/FP/G-200May 2002- Ed:4B
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS Very Low Forward Losses Negligible switching losses High surge current capability Insulated packages (ISOWATT220AC,
TO-220FPAC):
Insulation voltage: 2000 VDC
Typical insulation capacitance=12pF
FEATURES AND BENEFITSSingle rectifier suited for Switch Mode Power
Supply and high frequency DCto DC converters.
Packaged in TO-220AC, ISOWATT220AC,
TO-220FPAC andD2 PAK, this deviceis intended
for usein high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
BYW29/F/FP/G-200
THERMAL RESISTANCEPulse test:*tp=5 ms, duty cycle<2%tp= 380μs, duty cycle<2% evaluate the conduction losses use the following equation:
P=0.65xIF(AV)+ 0.040IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
RECOVERY CHARACTERISTICS
BYW29/F/FP/G-200
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IM(A)
Fig.2: Peak current versus form factor.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IFM(A)
Fig.3: Forward voltage drop versus forward cur-
rent (maximum values).
1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c)/Rth(j-c)
Fig.4-1: Relative variationof thermal impedance
junctionto case versus pulse duration (TO-220AC,2 PAK).
23 45 67 89 10 11
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.
1.E-03 1.E-02 1.E-01 1.E+00
IM(A)
Fig.5-1: Non repetitive surge peak forward current
versus overload duration (TO-220AC,D2 PAK).
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Zth(j-c)/Rth(j-c)
Fig.4-2 :Relative variationof thermal impedance
junction to case versus pulse duration
(TO-220FPAC, ISOWATT220AC).
BYW29/F/FP/G-200
1.E-03 1.E-02 1.E-01 1.E+00
IM(A)
Fig.5-2: Non repetitive surge peak forward cur-
rent versus overload duration (TO-220FPAC,
ISOWATT220AC).
25 50 75 100 125 150
IF(av)(A)
Fig.6: Average current versus ambient tempera-
ture.(δ= 0.5)
1000 100 1000
Qrr(nC)
Fig.8: Reverse recovery charges versus dIF/dt
(90%confidence).
100 10 100 1000
C(pF)
Fig.7: Junction capacitance versus reverse volt-
age applied (Typical values).
100 100 1000
IRM(A)
Fig.9: Peak reverse recovery current versus
dIF/dt (90% confidence).
1.50 25 50 75 100 125 150
Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
Fig.10: Dynamic parameters versus junction tem-
perature.
BYW29/F/FP/G-200
PACKAGE MECHANICAL DATA2 PAK (Plastic)
FOOT PRINT(in millimeters)
02468 10 12 14 16 18 20
Rth(j-a)(°C/W)
Fig.11: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35μm) for2 PAK.
BYW29/F/FP/G-200
PACKAGE MECHANICAL DATATO-220AC
PACKAGE MECHANICAL DATATO-220FPAC
