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BYW100-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
BYW100-200October 2001- Ed:4B
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
Low voltage drop and rectifier suitedfor switching
mode base drive and transistor circuits.
DESCRIPTION Very low conduction losses Negligible switching losses Low forward and reverse recovery times The specifications and curves enable the
determinationof trr and IRMat 100°C under
users conditions.
FEATURES AND BENEFITSOn infinitive heatsink with 10mm lead length
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
BYW100-200Pulse test:*tp=5ms,δ <2%tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=0.75xIF(AV)+ 0.075xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
RECOVERY CHARACTERISTICSOn infinite heatsink with 10mm lead length.
THERMAL RESISTANCES
BYW100-200 101520250
Rth(°C/W)
Fig.3: Thermal resistance versus lead length.
0.0 0.20.4 0.60.8 1.01.2 1.4 1.61.8 2.02.2 2.4 2.60.10
50.00
IFM(A)
Fig. 5: Forward voltage drop versus forward
current (maximum values).
1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01
Zth(j-a)/Rth(j-a)
Fig.4: Variationof thermal impedance junctionto
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)= 35μm). 10 100 2001
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.0
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current. 25 50 75 100 125 1500.0
1.8
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature (δ=0.5).
BYW100-200 50 75 100 125100
Tj(°C)
Fig. 9: Dynamic parameters versus junction
temperature. 10 1000
150
trr(ns)
Fig.7: Reverse recovery time versus dIF/dt. 10 1000.0
2.5
IRM(A)
Fig. 8: Peak reverse recovery current versus
dIF/dt.
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