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Partno	Mfg	Dc	Qty	Available	Descript
BYV74W-400 \|BYV74W400	PH	N/a	2261	avai	Dual ultrafast power diode

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BYV74W-400
Dual ultrafast power diode
TO-247 BYV74W-400
Dual ultrafast power diode16 July 2013 Product data sheet General description
Dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package. Features and benefits Very low on-state loss• Fast switching• Soft recovery characteristic minimizes power consuming oscillations• High thermal cycling performance• Low thermal resistance Applications
Output rectifiers in high-frequency switched-mode power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRRM repetitive peak reversevoltage - - 400 V
IF(AV) average forwardcurrent δ = 0.5 ; Tmb ≤ 104 °C; square-wave
pulse; per diode; Fig. 1; Fig. 2; Fig. 3 - 15 A
IO(AV) average output current δ = 0.5 ; Tmb ≤ 94 °C; square-wave
pulse; both diodes conducting - 30 A
Static characteristics forward voltage IF = 15 A; Tj = 150 °C; Fig. 6 - 0.95 1.12 V
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7 35 60 ns
NXP Semiconductors BYV74W-400
Dual ultrafast power diode Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol A1 anode 1 K cathode A2 anode 2 K mounting base; cathode21
TO-247 (SOT429)
sym125A1 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYV74W-400 TO-247 plastic single-ended through-hole package; heatsink mounted; 1
mounting hole; 3 lead TO-247
SOT429 Marking
Table 4. Marking codes
Type number Marking code
BYV74W-400 BYV74W-400 Limiting values
Table 5. Limiting values
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse voltage - 400 V
VRWM crest working reverse voltage - 400 V reverse voltage Tmb ≤ 136 °C; DC - 400 V
IF(AV) average forward current δ = 0.5 ; Tmb ≤ 104 °C; square-wave
pulse; per diode; Fig. 1; Fig. 2; Fig. 3 15 A
IO(AV) average output current δ = 0.5 ; Tmb ≤ 94 °C; square-wave
pulse; both diodes conducting 30 A
NXP Semiconductors BYV74W-400
Dual ultrafast power diode
Symbol Parameter Conditions Min Max Unit
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse; per diode; Fig. 4 170 AIFSM non-repetitive peak forwardcurrent
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; per diode; Fig. 4 185 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
IF(AV) (A)0 252010 155
003aal047
Ptot
(W)
δ = 1
Fig. 1. Forward power dissipation as a function of average forward current; square waveform; per
diode; maximum values
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IF(AV) (A)0 15105
Ptot
(W)
a = 1.57
Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform;
per diode; maximum values
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IF(AV)
(A)
104 °C
tp (s)10-5 10-210-310-4
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IFSM(A)
Tj(init) = 25 °C max IFSM
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;per diode; maximum values
NXP Semiconductors BYV74W-400
Dual ultrafast power diode Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
with heatsink compound; per diode;
Fig. 5 - 2.4 K/WRth(j-mb) thermal resistance
from junction tomounting base with heatsink compound; both diodes
conducting - 1.4 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air - 45 - K/W
003aal045
tp (s)10-6 1 1010-110-210-5 10-310-4
Zth(j-mb)
(K/W)
10-4tpδ =T
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
single pulse
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse width; per diode;
maximum values
10. Characteristics
Table 7. Characteristics
characteristics are per diode unless otherwise stated
Symbol Parameter Conditions Min Typ Max Unit 1.25 V 1.36 V 1.12 V 50 µA 0.8 mA
NXP Semiconductors BYV74W-400
Dual ultrafast power diode
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C; Fig. 7 40 60 nC
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7 35 60 ns
IRM peak reverse recovery
current
IF = 10 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 100 °C; Fig. 7 4.2 5.2 A
VFRM forward recovery
voltage
IF = 10 A; dIF/dt = 10 A/µs; Tj = 25 °C;
Fig. 8 2.5 - V
003aal051
VF (V)0 1.510.5
(A)
(1) (2) (3)
Fig. 6. Forward current as a function of forward
voltage; per diode
003aac562
trr
time
100%% dlF IRM
Fig. 7. Reverse recovery definitions; ramp recovery
NXP Semiconductors BYV74W-400
Dual ultrafast power diode
001aab912
time
time
VFRM
Fig. 8. Forward recovery definitions

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