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BYV72EW200-BYV72EW-200
Rectifier diodes ultrafast, rugged
Philips Semiconductors Product specification
Rectifier diodes BYV72EW series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA• Low forward volt drop VR = 150 V/ 200 V
• Fast switching • Soft recovery characteristic VF ≤ 0.85 V
• Reverse surge capability
• High thermal cycling performance IO(AV) = 30 A• Low thermal resistance
IRRM = 0.2 Arr ≤ 28 ns
GENERAL DESCRIPTION PINNING SOT429 (TO247)Dual, ultra-fast, epitaxial rectifier
PIN DESCRIPTIONdiodes intended for use as output
rectifiersin highfrequency switched 1 anode 1
mode power supplies. cathode
The BYV72EW seriesis suppliedin
the conventional leaded SOT429 3 anode 2
(TO247) package.
tab cathode
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV72EW -150 -200VRRM Peak repetitive reverse voltage - 150 200 V
VRWM Crest working reverse voltage - 150 200 V Continuous reverse voltage Tmb ≤ 144˚C - 150 200 V
IO(AV) Average rectified output current square wave - 30 A
(both diodes conducting)1 δ = 0.5; Tmb ≤ 104 ˚C
IFRM Repetitive peak forward current t = 25 μs; δ = 0.5; - 30 A
per diode Tmb ≤ 104 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
sinusoidal; with reapplied
VRWM(max)
IRRM Repetitive peak reverse current tp = 2 μs; δ = 0.001 - 0.2 A
per diode
IRSM Non-repetitive peak reverse tp = 100 μs - 0.2 A
current per diode
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
1 Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ31
Philips Semiconductors Product specification
Rectifier diodes BYV72EW series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes conducting - - 1.4 K/W
Rth j-a Thermal resistance junction to in free air - 45 - K/W
ambient
ELECTRICAL CHARACTERISTICScharacteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 15 A; Tj = 150˚C - 0.83 0.90 V
IF = 15 A - 0.95 1.05 V
IF = 30 A - 1.00 1.20 V Reverse current VR = VRWM; Tj = 100 ˚C - 0.5 1 mA
VR = VRWM - 10 100 μA Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs- 6 15 nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 28 ns
-dIF/dt = 100 A/μs
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 13 22 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs- 1 - V
Philips Semiconductors Product specification
Rectifier diodes BYV72EW series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Circuit schematic for trr2
Fig.4. Definition of trr2
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Fig.6. Maximum forward dissipation PF = f(IF(AV)) perRFR
0.5A
time
timeFF 5 10 15 20 250
IF(AV) / A
PF / W
Tmb(max) / C
shunt
Current
D.U.T.
Voltage Pulse Source 5 10 150
IF(AV) / A
PF / W Tmb(max) / C
150
Philips Semiconductors Product specification
Rectifier diodes BYV72EW series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
trr / ns
dIF/dt (A/us)
Qs / nC
Irrm / A 10 100-dIF/dt (A/us)
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W) VF / V
50
40
30
20
10
0.5 1.51.0
Philips Semiconductors Product specification
Rectifier diodes BYV72EW series
ultrafast, rugged
MECHANICAL DATADimensions in mm
Net Mass: 5 g
Fig.12. SOT429 (TO247); pin 2 connected to mounting base.
Notes1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
max
min
2.2 max
0.9 max
16 max
seating
plane
3.2 max
1.8
Philips Semiconductors Product specification
Rectifier diodes BYV72EW series
ultrafast, rugged
DEFINITIONS
Data sheet statusObjective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
