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BYV541V200-BYV541V-200-BYV54V200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYV54V
BYV541VHIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED:
Insulating voltage= 2500 VRMS
Capacitance=45pF
DESCRIPTION
FEATURESDual rectifier suitedfor switchmode power supply
and high frequency DCto DC converters.
Packagedin ISOTOPTM this deviceis intendedfor
usein low voltage, high frequency inverters, free
wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGSISOTOPisa trademarkof STMicroelectronics.
BYV54V / BYV541VPulse test:tp=5 ms, duty cycle<2%tp= 380μs, duty cycle<2%
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
RECOVERY CHARACTERISTICSWhen the diodes1 and2 are used simultaneously:
Tj-Tc (diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCE
BYV54V / BYV541V
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig.2: Peak current versus form factor.
10 100 500
VFM(V)
Fig.3: Forward voltage drop versus forward
current (maximum values).
1.0E-03 1.0E-02 1.0E-01 1.0E+00
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration.
5 10 15 20 25 30 35 40 45 500 F(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.
20 40 60 80 100 120 140 1600
F(av)(A)I
Fig.6 : Average current versus ambient
temperature. (duty cycle: 0.5)
0.001 0.01 0.1 10
400 M(A)
Fig.5: Non repetitive surge peak forward current
versus overload duration.
BYV54V / BYV541V
110 100240
C(pF)
Fig.7: Junction capacitance versus reverse
voltage applied (Typical values).
110 1000
120 QRR(nC)
Fig.8: Recovery charges versus dIF/dt.
QRR;IRM[Tj]/QRR;IRM[Tj=125 C] 25 50 75 100 125 1500.00
Fig.10: Dynamic parameters versus junction
temperature.
110 1000.0
IRM(A)
Fig.9: Peak reverse current versus dIF/dt.
BYV54V / BYV541V Marking: Type number Cooling method:C Weight:27g Epoxy meets UL94, V0
PACKAGE MECHANICAL DATAISOTOP
Informationfurnished isbelievedtobe accurateand reliable. However, STMicroelectronicsassumesno responsibilityforthe consequencesof
useof such informationnor forany infringement ofpatentsor otherrightsofthirdpartieswhichmay result fromitsuse. Nolicenseis grantedby
implicationor otherwise under any patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2000 STMicroelectronics- Printedin Italy-All rights reserved.
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