BYV52-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURESSUITED FOR SMPSA1VERY LOW FORWARD LOSSESKNEGLIGIBLE SWITCHING LOSSESA2HIGH SURGE CURRENT CA ..
BYV541V200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURESK2 A2 A2 K1n SUITED FOR SMPSn VERY LOW FORWARD LOSSESn NEGLIGIBLE SWITCHING LOSSESn HIGH SU ..
BYV541V-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESBYV54V®BYV541VHIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYV54V200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESapplications.(Plastic)
BYV72EW200 ,Rectifier diodes ultrafast, ruggedGENERAL DESCRIPTION PINNING SOT429 (TO247)Dual, ultra-fast, epitaxial rectifier PIN DESCRIPTIONdiod ..
BYV72EW-200 ,Rectifier diodes ultrafast, ruggedLIMITING VALUESYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV Electrostatic discharge Human body model; ..
C4-Y1.5R , Power Inductors
C4-Y1.5R , Power Inductors
C5001 , Low Skew Multiple Frequency PCI Clock Generator with EMI Reducing SSCG.
C505 ,8-Bit Single-Chip MicrocontrollerData Sheet, Dec. 2000C505C505CC505AC505CA8-Bit Single-Chip MicrocontrollerMicrocontrollersNe ve r ..
C50A50Z4 , Surface Mount Termination 50 Watts, 50Ω
C5100 , 5000 WATTS (AC) DC/D CSINGLE OUTPUT
BYV52200-BYV52-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYV52/PIOctober 1999 Ed : 2C
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
DESCRIPTION
FEATURESDual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, or TOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE MAXIMUM RATINGS1/6
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 μs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x IF(AV) + 0.0075 x IF2 (RMS)
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
RECOVERY CHARACTERISTICSWhen the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCE
BYV52/PI2/6
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1IM(A)
Fig.2 : Peak current versus form factor.
0.1 1 10 100 300
VFM(V)
Fig.3 : Forward voltage drop versus forward
current (maximum values).
1.0E-03 1.0E-02 1.0E-01 1.0E+00
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
5 10 15 20 25 30 35
PF(av)(W)
Fig.1 : Average forward power dissipation versusaverage forward current.
0.001 0.01 0.1 10
250 M(A)
Fig.6 : Non repetitive surge peak forward currentversus overload duration.
(TOP3I)
0.001 0.01 0.1 10
IM(A)
Fig.5 : Non repetitive surge peak forward currentversus overload duration.
(SOD93)
BYV52/PI3/6
20 40 60 80 100 120 140 1600F(av)(A)I
Fig.7 : Average current versus ambienttemperature.
(duty cycle : 0.5) (SOD93)
20 40 60 80 100 120 140 1600
F(av)(A)I
Fig.8 : Average current versus ambienttemperature.
(duty cycle : 0.5) (TOP3I)
Fig.9 : Junction capacitance versus reverse
voltage applied (Typical values).
110 1000
100 QRR(nC)
Fig.10 : Recovery charges versus dIF/dt.
QRR;IRM[Tj]/QRR;IRM[Tj=125C] 25 50 75 100 125 1500.00
Fig.12 : Dynamic parameters versus junction
temperature.
Fig.11 : Peak reverse current versus dIF/dt.
BYV52/PI4/6
PACKAGE MECHANICAL DATASOD93
Marking : Type numberCooling method : C
Weight : 3.79 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
BYV52/PI5/6
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://
Marking : Type numberCooling method : C
Weight : 4.46 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
PACKAGE MECHANICAL DATATOP3I (isolated)
BYV52/PI6/6
