BYV42E-150-BYV42E-200 Fast Delivery |IC PHOENIX CO.,LIMITED

BYV42E-150 ,Rectifier diodes ultrafast, ruggedPIN CONFIGURATION SYMBOLPIN DESCRIPTIONtab1 anode 1 (a)a1 a22 cathode (k)3 anode 2 (a)ktab cathode ..
BYV42E200 ,Rectifier diodes ultrafast, rugged
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BYV42E-200 ,Rectifier diodes ultrafast, ruggedGENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated high efficiency SYMBOL PARAMETER MAX. MAX. ..
BYV42E-200 ,Rectifier diodes ultrafast, rugged
BYV42E-200 ,Rectifier diodes ultrafast, rugged
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BYV42E-150-BYV42E-200
Rectifier diodes ultrafast, rugged
Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT
rugged dual rectifier diodes inaplastic envelope, featuring low BYV42E- 100 150 200
forward voltage drop, ultra-fast VRRM Repetitive peak reverse 100 150 200 V
recovery times and soft recovery voltagecharacteristic. These devices can VF Forward voltage 0.85 0.85 0.85 V
withstand reverse voltage transients IO(AV) Output current (both 30 30 30 A
and have guaranteed reverse surge diodes conducting)and ESD capability. They are trr Reverse recovery time 28 28 28 ns
intended for usein switched mode IRRM Repetitive peak reverse 0.2 0.2 0.2 A
power supplies and high frequency current per diodecircuits in general where low
conduction and switching losses are
essential.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION anode 1 (a) cathode (k) anode 2 (a)
tab cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-100 -150 -200
VRRM Repetitive peak reverse voltage - 100 150 200 V
VRWM Crest working reverse voltage - 100 150 200 V Continuous reverse voltage1 - 100 150 200 V
IO(AV) Output current (both diodes square wave - 30 A
conducting)2 δ = 0.5; Tmb ≤ 108 ˚C
sinusoidal - 27 A
a = 1.57; Tmb ≤ 111 ˚C
IO(RMS) RMS forward current - 43 A
IFRM Repetitive peak forward current t = 25 μs; δ = 0.5; - 30 A
per diode Tmb ≤ 108 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
sinusoidal; with reapplied
VRWM(max)2t I2 t for fusing t = 10 ms - 112 A2s
IRRM Repetitive peak reverse current tp = 2 μs; δ = 0.001 - 0.2 A
per diode
IRSM Non-repetitive peak reverse tp = 100 μs - 0.2 A
current per diode
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C23
tab
Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes conducting - - 1.4 K/W
Rth j-a Thermal resistance junction to in free air - 60 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage (per diode) IF = 15 A; Tj = 150˚C - 0.78 0.85 V
IF = 15 A - 0.95 1.05 VIF = 30 A - 1.00 1.20 V Reverse current (per diode) VR = VRWM; Tj = 100 ˚C - 0.5 1 mA
VR = VRWM - 10 100 μA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Reverse recovery charge (per IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs - 6 15 nC
diode)
trr1 Reverse recovery time (per IF = 1 A; VR ≥ 30 V; - 20 28 ns
diode) -dIF/dt = 100 A/μs
trr2 Reverse recovery time (per IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 13 22 ns
diode)
Vfr Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/μs - 1 - V
diode)
Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Circuit schematic for trr2
Fig.4. Definition of trr2
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Fig.6. Maximum forward dissipation PF = f(IF(AV)) perRFR
0.5A
time
timefrFF 5 10 15 20 250
IF(AV) / A
PF / W
Tmb(max) / C
shunt
Current
Voltage Pulse Source 5 10 150
IF(AV) / A
PF / W Tmb(max) / C
150
Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
trr / ns 10 100
dIF/dt (A/us)
1.0 10 100
-dIF/dt (A/us)
Qs / nC
Irrm / A 10 100-dIF/dt (A/us)
10 s0.11 ms10 us tp / s
Zth (K/W) VF / V
50
40
30
20
10
0.5 1.51.0
IF / A
Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. TO220AB; pin 2 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max3,0 max
not tinned
2,4
0,6
4,5
max
15,8max
1,3
2,54 2,54
13,5min
Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

Partno	Mfg	Dc	Qty	Available	Descript
BYV42E-150 \|BYV42E150	PHI	N/a	2948	avai	Rectifier diodes ultrafast, rugged
BYV42E-200 \|BYV42E200	PHILIPS	N/a	120	avai	Rectifier diodes ultrafast, rugged