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BYV32E150-BYV32E-150-BYV32E-200 -BYV32EB-200
Rectifier diodes ultrafast, rugged
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop VR = 100/ 150 V/ 200 V
Fast switching Soft recovery characteristic VF ≤ 0.85 V
Reverse surge capability
High thermal cycling performance IO(AV) = 20 A Low thermal resistance
IRRM = 0.2 Arr ≤ 25 ns
GENERAL DESCRIPTIONDual, ultra-fast, epitaxial rectifier diodes intendedfor useas output rectifiersin high frequency switched mode power
supplies.
The BYV32E seriesis suppliedin the SOT78 conventional leaded package.
The BYV32EB seriesis suppliedin the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
PIN DESCRIPTION anode 1 (a) cathode (k)
1 anode 2 (a)
tab cathode (k)
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV32E / BYV32EB -100 -150 -200VRRM Peaqk repetitive reverse - 100 150 200 V
voltage
VRWM Crest working reverse voltage - 100 150 200 V Continuous reverse voltage - 100 150 200 V
IO(AV) Average rectified output current square wave; δ = 0.5; - 20 A
(both diodes conducting) Tmb ≤ 115 ˚C
IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A
per diode Tmb ≤ 115 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 125 A
current per diode t = 8.3 ms - 137 A
sinusoidal; with reapplied
VRWM(max)
IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
IRSM Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
1 It is not possible to make connection to pin 2 of the SOT404 package
tab3
tab
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance junction per diode - - 2.4 K/W
to mounting base both diodes - - 1.6 K/W
Rth j-a Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 and SOT428 packages, pcb - 50 - K/W
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICScharacteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITF Forward voltage IF = 8 A; Tj = 150˚C - 0.72 0.85 V
IF = 20 A - 1.00 1.15 V Reverse current VR = VRWM; Tj = 100 ˚C - 0.2 0.6 mAVR = V RWM -6 30 µA Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 8 12.5 nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 25 ns-dIF /dt = 100 A/µs
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 10 20 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs- 1 - V
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Circuit schematic for trr2
Fig.4. Definition of trr2
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Fig.6. Maximum forward dissipation PF = f(IF(AV)) perRFR
0.5A
time
timeFF 5 10 150
IF(AV) / A
PF / W Tmb(max) / C
shunt
Current
D.U.T.
Voltage Pulse Source
02468 100
IF(AV) / A
PF / W
Tmb(max) / C
150
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic
per diode; IF = f(VF); parameter Tj
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
trr / ns
Qs / nC
Irrm / A 10 100
-dIF/dt (A/us)
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W) 1 0.5 1.5VF / V
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max3,0 max
not tinned
2,4
0,6
4,5
max
15,8max
1,3
2,54 2,54
13,5min
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
MECHANICAL DATADimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONSDimensions in mm
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes1. Epoxy meets UL94 V0 at 1/8".
4.5 max
10.3 max
3.8
