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BYV32E100
Dual ultrafast power diode
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
Rev. 04 — 2 March 2009 Product data sheet Product profile
1.1 General descriptionUltrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance Soft recovery characteristic minimizes
power consuming oscillations Very low on-state loss
1.3 Applications Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data Table 1. Quick referenceVRRM repetitive peak
reverse voltage - 100 V
IO(AV) average output
current
square-wave pulse; δ= 0.5;
Tmb≤ 115 °C; both diodes
conducting; see Figure 1;
see Figure 2
--20 A
IRRM repetitive peak
reverse current =2µs; δ= 0.001 --0.2 A
VESD electrostatic
discharge voltage
HBM; C = 250 pF; R = 1.5
kΩ; all pins
--8 kV
Dynamic characteristicstrr reverse recovery
time =1A; VR =30V;
dIF/dt= 100 A/µs; =25 °C; ramp recovery;
see Figure 5 2025ns =1 A; IF =0.5A; =25 °C; measured at
reverse current = 0.25 A;
step recovery; see Figure 6 1020ns
Static characteristics forward voltage IF =8A; Tj =150 °C; see
Figure 4 0.72 0.85 V
NXP Semiconductors BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V Pinning information Ordering information
Table 2. Pinning information A1 anode 1
SOT78
(TO-220AB; SC-46) K cathode A2 anode 2 K mounting base; cathode
sym125A1
Table 3. Ordering informationBYV32E-100 TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
NXP Semiconductors BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse
voltage
-100 V
VRWM crest working reverse
voltage
-100 V reverse voltage DC - 100 V
IO(AV) average output current square-wave pulse; δ= 0.5; Tmb≤ 115 °C; both
diodes conducting; see Figure 1; see Figure 2
-20 A
IFRM repetitive peak forward
current= 0.5; tp=25 µs; Tmb≤ 115 °C; per diode - 20 A
IFSM non-repetitive peak
forward current= 8.3 ms; sine-wave pulse; Tj(init)=25 °C; per
diode
-137 A=10 ms; sine-wave pulse; Tj(init) =25 °C; per
diode
-125 A
IRRM repetitive peak reverse
current= 0.001; tp =2µs - 0.2 A
IRSM non-repetitive peak
reverse current= 100µs - 0.2 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
VESD electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV
NXP Semiconductors BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V Thermal characteristics Characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting
base
with heatsink compound; both diodes
conducting
--1.6 K/W
with heatsink compound; per diode; see
Figure 3
--2.4 K/W
Rth(j-a) thermal resistance from
junction to ambient
-60 - K/W
Table 6. Characteristics
Static characteristics forward voltage IF =8A; Tj= 150 °C; see Figure 4 - 0.72 0.85 V =20A; Tj =25°C - 1 1.15 V reverse current VR =100 V; Tj= 100°C - 0.2 0.6 mA =100 V; Tj =25°C - 6 30 µA
Dynamic characteristics recovered charge IF =2A; VR =30 V; dIF/dt=20 A/µs; =25°C 12.5 nC
trr reverse recovery time IF =1A; VR =30 V; dIF/dt= 100 A/µs;
ramp recovery; Tj=25 °C; see Figure 5
-20 25 ns= 0.5 A; IR=1 A; measured at reverse
current = 0.25 A; step recovery; Tj =25°C;
see Figure 6
-10 20 ns
VFR forward recovery
voltage =1A; dIF/dt=10 A/µs; Tj=25 °C; see
Figure 7
--1 V
NXP Semiconductors BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
NXP Semiconductors BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V Package outline
