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BYV29X-600
Ultrafast power diode
Product profile1.1 General descriptionUltrafast, epitaxial rectifier diode in a SOD113 (TO-220F) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
BYV29X-600
Rectifier diode ultrafast
Rev. 02 — 4 September 2007 Product data sheet Fast switching n Low thermal resistance Soft recovery characteristic n Isolated package Low forward voltage drop n High thermal cycling performance Output rectifiers in high frequency
switched-mode power supplies Discontinuous Current Mode (DCM)
Power Factor Correction (PFC) VRRM≤ 600V n IF(AV)≤ 9A VF≤ 1.11V n trr≤60ns
Table 1. Pinning cathode (k)
SOD113 (2-lead TO-220F) anode (a) mounting base; isolated1 a
001aaa020
NXP Semiconductors BYV29X-600
Rectifier diode ultrafast Ordering information Limiting values
Table 2. Ordering informationBYV29X-600 TO-220F plastic single-ended package; isolated heatsink mounted;1 mounting hole;
2-lead TO-220 ‘full pack’
SOD113
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage square waveform;δ= 1.0; Th≤ 100°C - 600 V
IF(AV) average forward current square waveform;δ= 0.5; Th≤85 °C- 9 A
IFRM repetitive peak forward current t=25 μs; square waveform;δ= 0.5;≤85°C
-18 A
IFSM non-repetitive peak forward
current=10 ms; sinusoidal waveform - 91 A= 8.3 ms; sinusoidal waveform - 100 A
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
NXP Semiconductors BYV29X-600
Rectifier diode ultrafast Thermal characteristics Isolation characteristics
Table 4. Thermal characteristicsRth(j-h) thermal resistance from junction to heatsink with heatsink compound;
see Figure1 - 5.5 K/W
without heatsink compound - - 5.9 K/W
Rth(j-a) thermal resistance from junction to ambient in free air - 55 - K/W
Table 5. Isolation limiting values and characteristicsTh = 25 °C unless otherwise specified.
Visol(RMS) RMS isolation voltage from all terminals to external heatsink;=50 Hz to 60 Hz; sinusoidal waveform;
relative humidity≤65 %; clean and dust free - 2500 V
Cisol isolation capacitance from cathode to external heatsink; f=1 MHz - 10 - pF
NXP Semiconductors BYV29X-600
Rectifier diode ultrafast Characteristics
Table 6. CharacteristicsTj = 25 °C unless otherwise specified.
Static characteristics forward voltage IF=8 A; Tj= 150 °C; see Figure2 - 0.97 1.11 V=8 A; see Figure2 - 1.12 1.26 V=20 A; see Figure2 - 1.31 1.45 V reverse current VR= 600V - 2 50 μA= 600 V; Tj= 100°C - 0.1 0.35 mA
Dynamic characteristics recovered charge IF =2AtoVR≥30V; dIF/dt=20A/μs;
see Figure3 4070nC
trr reverse recovery time IF=1 A to VR≥30V;
dIF/dt= 100 A/μs; see Figure3 5060ns
IRM peak reverse recovery
current=10 A to VR≥30V;
dIF/dt=50A/μs; Tj= 100 °C;
see Figure3 3 5.5 A
VFR forward recovery
voltage=10 A; dIF/dt=10A/μs;
see Figure4 3.2 - V
NXP Semiconductors BYV29X-600
Rectifier diode ultrafast
NXP Semiconductors BYV29X-600
Rectifier diode ultrafast
