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Partno	Mfg	Dc	Qty	Available	Descript
BYV29B-600 \|BYV29B600	PHI	N/a	59	avai	Ultrafast power diode
BYV29B-600 \|BYV29B600	PHILIPS	N/a	20	avai	Ultrafast power diode

BYV29B-600 ,Ultrafast power diodeGeneral descriptionUltra-fast, epitaxial rectifier diode in a surface mount plastic package.Product ..
BYV29B-600 ,Ultrafast power diodeApplications  Switched-mode power supplies Low loss rectification.1.4 Quick reference data  V 6 ..
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BYV29B-600
Ultrafast power diode
1. Product profile
1.1 General description
Ultra-fast, epitaxial rectifier diode in a surface mount plastic package.
Product availability:
BYV29B-600 in SOT404 (D2PAK).
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
2. Pinning information
[1] It is not possible to make connection to pin 2 of the SOT404 package.
BYV29B-600
Rectifier diode ultrafast
Rev. 2 — 14 September 2011 Product data sheet Low forward voltage  Fast switching Soft recovery characteristic  High thermal cycling performance. Switched-mode power supplies  Low loss rectification. VR 600V  VF 1.03V IF(AV) 9A  trr60ns
Table 1. Pinning - SOT404 (D2PAK), simplified outline and symbol
NXP Semiconductors BYV29B-600
Rectifier diode ultrafast
3. Ordering information
4. Limiting values
[1] Neglecting switching and reverse current losses.
Table 2. Ordering information
BYV29B-600 D2PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage -600 V
IF(AV) average forward current square wave; = 0.5; Tmb 120C [1] -9 A
IFRM repetitive peak forward current square wave; t=25 s; = 0.5;
Tmb 120C
-18 A
IFSM non-repetitive peak forward current sinusoidal; with reapplied VRRM(max) =10 ms - 70 A =8.3ms - 77 A
Tstg storage temperature 40 +150 C junction temperature - +150 C
NXP Semiconductors BYV29B-600
Rectifier diode ultrafast
NXP Semiconductors BYV29B-600
Rectifier diode ultrafast
5. Thermal characteristics
5.1 Transient thermal impedance
Table 4. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting base Figure3 -- 2.5 K/W
Rth(j-a) thermal resistance from junction to ambient in free air - 50- K/W
NXP Semiconductors BYV29B-600
Rectifier diode ultrafast
6. CharacteristicsTable 5. Characteristics =25 C unless otherwise specified.
Static characteristics forward voltage IF =8A= 150 C; Figure4 - 0.9 1.03 V =25 C; Figure4 - 1.05 1.25 V=20A - 1.3 1.45 V reverse current VR =VRRM= 100 C- 0.1 0.35 mA =25 C- 2 50 A
Dynamic characteristics diode capacitance f=1 MHz;VR= 100 V; Figure8 -7 - pF
Qrr reverse recovery charge IF =2A; VR30 V; dIF/dt=20 A/s;
Figure7
-40 70 nC
trr reverse recovery time IF =1A; VR30 V; dIF/dt= 100 A/s;
Figure5
-50 60 ns
Irrm peak reverse recovery current IF =10A; VR30 V; dIF/dt=50 A/s = 100 C; Figure6 5.5 A
Vfr forward recovery voltage IF =10A; dIF/dt=10 A/s - 3.2 - V
NXP Semiconductors BYV29B-600
Rectifier diode ultrafast

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