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BYV29-600
Rectifier diodes ultrafast
Philips Semiconductors Product specification
Rectifier diodes BYV29-600
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop VR = 600V
Fast switching
Soft recovery characteristic VF ≤ 1.03 V
High thermal cycling performance
Low thermal resistance I F(AV) = 9 Arr ≤ 60 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)Ultra-fast, epitaxial rectifier diodes
PIN DESCRIPTIONintendedfor useas output rectifiers high frequency switched mode 1 cathode
power supplies. anode
The BYV29-600is suppliedin the
conventional leaded SOD59 tab cathode
(TO220AC) package.
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVRRM Peak repetitive reverse voltage - 600 VV RWM Crest working reverse voltage - 600 V Continuous reverse voltage - 600 V
IF(AV) Average forward current1 square wave; δ = 0.5; - 9 A
Tmb ≤ 120 ˚C
IFRM Repetitive peak forward current t = 25 μs; δ = 0.5; - 18 A
Tmb ≤ 120 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 70 A
current. t = 8.3 ms - 77 A
sinusoidal; with reapplied
VRRM(max)
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance junction to - - 2.5 K/W
mounting base
Rth j-a Thermal resistance junction to in free air. - 60 - K/W
ambient
tab
Philips Semiconductors Product specification
Rectifier diodes BYV29-600
ultrafast
ELECTRICAL CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 8 A; Tj = 150˚C - 0.90 1.03 V
IF = 8 A - 1.05 1.25 V
IF = 20 A - 1.30 1.45 V Reverse current VR = VRRM - 2.0 50 μA
VR = VRRM; Tj = 100 ˚C - 0.1 0.35 mA Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 70 nC
dIF/dt = 20 A/μs
trr Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/μs
Irrm Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 3.0 5.5 A
dIF/dt = 50 A/μs; Tj = 100˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/μs - 3.2 - V
Philips Semiconductors Product specification
Rectifier diodes BYV29-600
ultrafast
Fig.1. Definition of trr, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Maximum forward dissipation PF = f(IF(AV));
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.RF
468 10 12
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Ths(max) (C)time
timeFF
trr / ns1000 100
-diF/dt
02468 10 12 14
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Ths(max) (C)
112.5Irrm / A 10 100
-dIF/dt (A/us)
Philips Semiconductors Product specification
Rectifier diodes BYV29-600
ultrafast
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.8. Typical junction capacitance Cd at f = 1 MHz;
Tj = 25˚C
Fig.9. Maximum Qs at Tj = 25˚C
Fig.10. Transient thermal impedance Zth j-mb= f(tp) 1 2
30
20
10
IF / A
0.5 1.5
VF / V Qs / nC
110 100-diF / dt
Cd / pF100 10 100 1000
VR / V1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
Philips Semiconductors Product specification
Rectifier diodes BYV29-600
ultrafast
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.11. TO220AC; pin 1 connected to mounting base.
Notes1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220 SOD59
Philips Semiconductors Product specification
Rectifier diodes BYV29-600
ultrafast
DEFINITIONS
Data sheet statusObjective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
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consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
