BYV25D-600 ,Ultrafast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYV25X-600 ,Ultrafast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYV26A ,Diodes
BYV26A ,Diodes
BYV26A ,Diodes
BYV26A ,Diodes
C4500 , OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options
C4532X7R1H685M , Commercial Grade ( General (Up to 50V) )
C4532X7R2A225M , LM3402/LM3402HV 0.5A Constant Current Buck Regulator for Driving High Power LEDs
C4545 , Circuit Protection Solutions Low Voltage Fuse Links Catalogue
C4558C ,HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER features higher speed, broader . Output short circuit protection
bandwidth, and lower noise comp ..
C4731 , 2500 WATTS (AC) DC/D CSINGLE OUTPUT
BYV25D-600
Ultrafast power diode
Product profile1.1 General descriptionUltrafast, epitaxial rectifier diodeina SOT428 (DPAK) surface-mountable plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information[1] It is not possible to connect to pin 2 of the SOT428 package.
BYV25D-600
Rectifier diode, ultrafast
Rev. 01 — 29 July 2008 Product data sheet Fast switching n Low thermal resistance Soft recovery characteristic n High thermal cycling performance Low forward voltage drop High frequency switched-mode power
supplies Discontinuous Current Mode (DCM)
Power Factor Correction (PFC) VRRM≤ 600V n IF(AV)≤ 5A VF≤ 1.11V n trr≤60ns
Table 1. Pinning no connection
SOT428 (DPAK) cathode (k) [1] anode (a) mounting base; cathode (k)
001aaa020
NXP Semiconductors BYV25D-600
Rectifier diode, ultrafast Ordering information Limiting values
Table 2. Ordering informationBYV25D-600 DPAK plastic single-ended surface-mounted package (DPAK); 3-leads (one lead cropped) SOT428
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage square waveform;δ= 1.0; Tmb≤ 100°C - 600 V
IF(AV) average forward current square waveform;δ= 0.5; Tmb≤ 131 °C- 5 A
IFRM repetitive peak forward current square waveform;δ= 0.5; Tmb≤ 131°C - 10 A
IFSM non-repetitive peak forward current t=10 ms; sinusoidal waveform - 60 A= 8.3 ms; sinusoidal waveform - 66 A
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
NXP Semiconductors BYV25D-600
Rectifier diode, ultrafast Thermal characteristics[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 4. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
with heatsink compound;
see Figure1 - 3.0 K/W
Rth(j-a) thermal resistance from junction to ambient in free air [1]- 50 - K/W
NXP Semiconductors BYV25D-600
Rectifier diode, ultrafast Characteristics
Table 5. CharacteristicsTj = 25 °C unless otherwise specified.
Static characteristics forward voltage IF=5 A; Tj= 150 °C; see Figure2 - 0.97 1.11 V=5A - 1.12 1.30 V reverse current VR= 600V - 2 50 μA= 600 V; Tj= 100°C - 0.1 0.35 mA
Dynamic characteristics recovered charge IF =2AtoVR≥30V; dIF/dt=20A/μs;
see Figure3 4070nC
trr reverse recovery time IF=1 A to VR≥30V;
dIF/dt= 100 A/μs; see Figure3 5060ns
IRM peak reverse recovery
current=10 A to VR≥30V;
dIF/dt=50A/μs; Tj= 100 °C;
see Figure3 3 5.5 A
VFR forward recovery
voltage=10 A; dIF/dt=10A/μs;
see Figure4 3.2 - V
NXP Semiconductors BYV25D-600
Rectifier diode, ultrafast
NXP Semiconductors BYV25D-600
Rectifier diode, ultrafast Package outline
Fig 7. Package outline SOT428 (TO-252)
SOT428
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
