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BYV10-60 |BYV1060STN/a1850avaiSMALL SIGNAL SCHOTTKY DIODE


BYV10-60 ,SMALL SIGNAL SCHOTTKY DIODEBYV 10-60®SMALL SIGNAL SCHOTTKY DIODEDESCRIPTIONMetal to silicon rectifier diode in glass case feat ..
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BYV10-60
SMALL SIGNAL SCHOTTKY DIODE
BYV 10-60SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION

Metal to silicon rectifier diode in glass case featu-
ring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre-
quency circuits.
August 1999 Ed: 1A
ABSOLUTE RATINGS (limiting values)

* On infinite heatsink with 4mm lead length
THERMAL RESIST ANCE

1/4
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS

DYNAMIC CHARACTERISTICS
Forward current flow in a schottky rectifier is due to
majority carrier conduction. So reverse recovery is
not affected by stored charge as in conventional PN
junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
schottky rectifier consists of an ideal diode in paral-
lel with a variable capacitance equal to the junction
capacitance (see fig. 5 page 4/4). Pulse test: tp ≤ 300μs δ < 2%.
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
BYV 10-60
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus VRRM in per
cent.
Figure 5. Capacitance C versus reverse
applied voltage VR (typical values).
Figure 6. Surge non repetitive forward current
for a rectangular pulse with t ≤ 10 ms.

3/4
BYV 10-60
Figure 7. Surge non repetitive forward current
versus number of cycles.

Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.34g
PACKAGE MECHANICAL DATA

DO 41 Glass
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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