BYT79-600 ,Ultrafast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BYT85-1000 ,Ultra Fast Recovery Silicon Power RectifierElectrical CharacteristicsT = 25
BYT79-600
Ultrafast power diode
Product profile1.1 General descriptionUltrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
BYT79-600
Rectifier diode ultrafast
Rev. 01 — 16 October 2007 Product data sheet Fast switching n Low thermal resistance Soft recovery characteristic n Low forward voltage drop Low switching loss n High thermal cycling performance Output rectifiers in high frequency
switched-mode power supplies Discontinuous Current Mode (DCM)
Power Factor Correction (PFC) VRRM≤ 600V n IF(AV)≤15A VF≤ 1.2V n trr≤60ns
Table 1. Pinning cathode (k)
SOD59 (2-lead TO-220AC) anode (a) mounting base; cathode
001aaa020
NXP Semiconductors BYT79-600
Rectifier diode ultrafast Ordering information Limiting values
Table 2. Ordering informationBYT79-600 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead
TO-220AC
SOD59
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage square waveform;δ= 1.0;
Tmb≤ 147°C 600 V
IF(AV) average forward current square waveform;δ= 0.5;
Tmb≤ 108°C
-15 A
IFRM repetitive peak forward current t=25 μs; square waveform;δ= 0.5;
Tmb≤ 108°C
-30 A
IFSM non-repetitive peak forward
current=10 ms; sinusoidal waveform - 130 A= 8.3 ms; sinusoidal waveform - 143 A
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
NXP Semiconductors BYT79-600
Rectifier diode ultrafast Thermal characteristics
Table 4. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
with heatsink compound;
see Figure1 - 2.0 K/W
Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W
NXP Semiconductors BYT79-600
Rectifier diode ultrafast Characteristics
Table 5. CharacteristicsTj = 25 °C unless otherwise specified.
Static characteristics forward voltage IF=15 A; Tj= 150 °C; see Figure2 - 1.0 1.2 V=15 A; see Figure2 - 1.17 1.38 V reverse current VR= 600V - 5 50 μA= 600 V; Tj= 100°C - 0.2 0.8 mA
Dynamic characteristics recovered charge IF =2AtoVR≥30V; dIF/dt=20A/μs;
see Figure3 4070nC
trr reverse recovery time IF=1 A to VR≥30V;
dIF/dt= 100 A/μs; see Figure3 5060ns
IRM peak reverse recovery
current=10 A to VR≥30V;
dIF/dt=50A/μs; Tj= 100 °C;
see Figure3 3.0 5.2 A
VFR forward recovery
voltage=10 A; dIF/dt=10A/μs;
see Figure4 3.2 - V
NXP Semiconductors BYT79-600
Rectifier diode ultrafast
NXP Semiconductors BYT79-600
Rectifier diode ultrafast Package outline
Fig 7. Package outline SOD59 (2-lead TO-220AC)
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59
